{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFP4468PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFP4468PBF","canonicalUrl":"https://icboms.com/infineon/IRFP4468PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFP4468PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRFP4468PBF, N-Channel MOSFET, 100 V drain-source, 195 A continuous drain, 2.6 mOhm Rds(on) at 10 V, 540 nC gate charge, TO-247AC through-hole, -55°C to 175°C junction temperature.","salesMarkdown":"## 540 nC gate charge — driver current budget Total gate charge is 540 nC at 10 V. For a switching frequency of 20 kHz, the average gate drive current needed is 540 nC × 20 kHz = 10.8 mA, but the peak current during the Miller plateau determines the driver's instantaneous capability. The 19860 pF input capacitance at 50 V drain-source gives a sense of the capacitive load the gate driver sees during turn-on. ## TO-247AC through-hole — thermal and mechanical fit Housed in a TO-247-3 (TO-247AC) through-hole package, this part dissipates up to 520 W at the case. The through-hole leads need a drilled PCB or a heatsink with screw terminals — not a surface-mount reflow step.","metaTitle":"IRFP4468PBF N-Channel HEXFET MOSFET, 100V, 195A, 2.6mOhm","metaDescription":"IRFP4468PBF N-channel HEXFET MOSFET, 100 Vdss, 195 A continuous drain, 2.6 mOhm Rds(on) at 10 V. TO-247AC through-hole, active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2.6mOhm @ 180A, 10V","Power Dissipation (Max)":"520W (Tc)","Supplier Device Package":"TO-247AC","Gate Charge (Qg) (Max) @ Vgs":"540 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"19860 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"195A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.76","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$8.76000","currency":"USD"},{"qty":10,"price":"$7.50600","currency":"USD"},{"qty":100,"price":"$6.25540","currency":"USD"},{"qty":500,"price":"$5.51944","currency":"USD"},{"qty":1000,"price":"$4.96750","currency":"USD"},{"qty":2000,"price":"$4.65474","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c1a1d4c0c3bcd89f809cc1805adc5fff.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFP4468PBF?","answer":"This is the spec to use for worst-case conduction loss calculations in the thermal design."},{"question":"What is the gate charge of IRFP4468PBF?","answer":"The total gate charge is 540 nC at a 10 V gate drive. This figure drives the gate driver selection and switching loss calculation at the target frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFP4468PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFP4468PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}