{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFP4332PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFP4332PBF","canonicalUrl":"https://icboms.com/infineon/IRFP4332PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFP4332PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRFP4332PBF, N-Channel MOSFET, 250V Vdss, 57A Id, 33mOhm Rds(on) at 10V, 150nC Qg, TO-247-3 through-hole, -40°C to 175°C junction.","salesMarkdown":"## 250 V, 57 A — the power-stage anchor The IRFP4332PBF is an Infineon HEXFET N-channel power MOSFET rated at 250 V drain-to-source with a continuous drain current of 57 A at 25 °C case temperature. The 150 nC total gate charge at 10 V means the gate driver must supply about 15 mA average current to switch at 100 kHz — well within the capability of a standard totem-pole driver like the IR2110. ## Rds(on) at 35 A — where the heat goes At 35 A load current and 10 V gate drive, the 33 mOhm Rds(on) produces 40.4 W of conduction loss at 25 °C junction. That figure climbs with junction temperature — the datasheet normalised curve typically shows 1.6× the 25 °C value at 125 °C junction, pushing loss toward 65 W. The 360 W maximum power dissipation rating in the TO-247AC package assumes the case is held at 25 °C; real-world heatsink selection must derate from that ceiling. ## Gate charge and switching speed The 150 nC total gate charge at 10 V means the gate driver must supply average current to switch at frequency. The ±30 V maximum gate-source rating gives headroom for gate-drive overshoot. ## Through-hole TO-247AC — mounting and thermal path The TO-247-3 (TO-247AC) package uses a standard through-hole footprint with a mounting hole for a screw or clip to the heatsink. The exposed metal tab is the drain.","metaTitle":"IRFP4332PBF HEXFET N-Channel MOSFET, 250V 57A TO-247AC","metaDescription":"IRFP4332PBF HEXFET N-channel MOSFET, 250V Vdss, 57A continuous drain, 33mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"-40°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"33mOhm @ 35A, 10V","Power Dissipation (Max)":"360W (Tc)","Supplier Device Package":"TO-247AC","Gate Charge (Qg) (Max) @ Vgs":"150 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"5860 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"57A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.42","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.42000","currency":"USD"},{"qty":10,"price":"$4.55400","currency":"USD"},{"qty":100,"price":"$3.68440","currency":"USD"},{"qty":500,"price":"$3.27498","currency":"USD"},{"qty":1000,"price":"$2.80421","currency":"USD"},{"qty":2000,"price":"$2.64046","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8efeba1b26e0f850820880a55f72938b.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFP4332PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFP4332PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}