{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFP2907PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFP2907PBF","canonicalUrl":"https://icboms.com/infineon/IRFP2907PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFP2907PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRFP2907PBF, N-Channel MOSFET, 75 V Vdss, 209 A Id, 4.5 mOhm Rds(on) at 125 A, 620 nC gate charge, TO-247AC through-hole package.","salesMarkdown":"## Gate drive budget — 620 nC Total gate charge is 620 nC at 10 V Vgs. At 20 kHz switching, the average gate current is 12.4 mA; the peak current from the driver must be higher to charge the gate within the switching dead-time. The 13 000 pF input capacitance at 25 V Vds confirms the gate drive must be sized for a stiff, low-impedance path to avoid Miller plateau slowdown. ## Thermal budget — 470 W dissipation ceiling Maximum power dissipation is 470 W at the case, with the junction rated from -55 °C to 175 °C. The TO-247AC package's large tab area lets the designer mount to a heatsink with a low thermal resistance path — the 175 °C junction limit means the thermal impedance of the mounting interface, not the silicon, will set the practical current derating above 25 °C.","metaTitle":"IRFP2907PBF HEXFET N-Channel MOSFET, 75V 209A TO-247AC","metaDescription":"IRFP2907PBF N-channel MOSFET, 75V Vdss, 209A Id, 4.5mOhm Rds(on) at 125A. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.5mOhm @ 125A, 10V","Power Dissipation (Max)":"470W (Tc)","Supplier Device Package":"TO-247AC","Gate Charge (Qg) (Max) @ Vgs":"620 nC @ 10 V","Drain to Source Voltage (Vdss)":"75 V","Input Capacitance (Ciss) (Max) @ Vds":"13000 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"209A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.75","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.75000","currency":"USD"},{"qty":10,"price":"$4.82700","currency":"USD"},{"qty":100,"price":"$3.90490","currency":"USD"},{"qty":500,"price":"$3.47102","currency":"USD"},{"qty":1000,"price":"$2.97206","currency":"USD"},{"qty":2000,"price":"$2.79851","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ddc51b2a84eca96631eef80997abfc37.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFP2907PBF?","answer":"The maximum Rds(on) is 4.5 mOhm at 125 A drain current and 10 V gate drive, specified at 25 °C junction temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFP2907PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFP2907PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}