{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFH8316TRPBF-IR","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFH8316TRPBF-IR","canonicalUrl":"https://icboms.com/infineon/IRFH8316TRPBF-IR","factsUrl":"https://icboms.com/api/mcp/products/IRFH8316TRPBF-IR","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFH8316TRPBF-IR, HEXFET® N-Channel Power MOSFET, 30 V drain-source, 27 A switching current, 2.95 mOhm Rds(on) at 20 A, 10 V, 59 nC gate charge, -55 to 150 °C junction temperature.","salesMarkdown":"## 2.95 mOhm Rds(on) — the conduction loss floor The IRFH8316TRPBF-IR is an Infineon HEXFET® N-channel power MOSFET rated for 30 V drain-source and 27 A switching current. For a 12 V bus load switch or a low-side synchronous rectifier, that on-resistance keeps the heatsink small or absent. ## 59 nC gate charge — what the driver sees Gate charge totals 59 nC at 10 V Vgs. For a 100 kHz switching regulator, that translates to about 5.9 mA average gate drive current — easily handled by a standard MOSFET driver. The ±20 V Vgs rating gives headroom for gate-drive overshoot on a 12 V rail without avalanche stress on the oxide. ## Junction temperature range and package The 2.2 V maximum gate threshold at 50 µA drain current means the part turns on fully with 5 V logic, though the lowest Rds(on) requires the full 10 V drive.","metaTitle":"IRFH8316TRPBF-IR HEXFET N-Channel MOSFET, 30 V, 2.95 mOhm","metaDescription":"IRFH8316TRPBF-IR HEXFET N-Channel MOSFET, 30 V drain-source, 27 A switching current, 2.95 mOhm Rds(on) at 20 A, 10 V. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"3.6","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0036","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.2 V @ 50µA","switching_current_a":"27.0","Rds On (Max) @ Id, Vgs":"2.95mOhm @ 20 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"59 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.32","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c41466621ed9a9002662848ca3383101.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the exact Rds(on) of IRFH8316TRPBF-IR?","answer":"The maximum Rds(on) is 2.95 mOhm at 20 A drain current with a 10 V gate-source voltage. This is the worst-case value at 25 °C junction temperature; actual on-resistance rises with temperature per the normalised curve in the datasheet."},{"question":"Does IRFH8316TRPBF-IR have a Pb-free finish?","answer":"The part number suffix 'TRPBF' indicates a Pb-free (RoHS-compliant) plating finish. The 'IR' suffix denotes Infineon's standard reel packaging."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFH8316TRPBF-IR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFH8316TRPBF-IR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}