{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFH8303TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFH8303TRPBF","canonicalUrl":"https://icboms.com/infineon/IRFH8303TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFH8303TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET®, StrongIRFET™ N-Channel MOSFET, 30 V Vdss, 43 A (Ta) / 100 A (Tc) continuous drain, 1.1 mOhm Rds(on) at 50 A, 10 V, 179 nC gate charge, 8-PowerTDFN (5x6 mm PQFN) package, -55°C to 150°C.","salesMarkdown":"## 1.1 mOhm at 50 A — the conduction-loss floor The IRFH8303TRPBF is an N-channel MOSFET from Infineon's HEXFET® and StrongIRFET™ series, built for low-voltage, high-current switching. At 50 A the dissipation in the channel is under 3 W, which keeps the junction within the -55°C to 150°C operating range even without aggressive heatsinking, provided the PCB copper area under the 8-PowerTDFN package is adequate. ## Dual current rating — Ta vs Tc The continuous drain current is rated at 43 A at 25°C ambient (Ta) and 100 A at 25°C case temperature (Tc). The Ta figure assumes free-air convection on a standard footprint; the Tc figure reflects the silicon limit when the package backside is soldered to a large copper plane or heatsink. For a 50 A rail, the design can stay within the Ta rating with good layout, but for the full 100 A capability the board must pull heat from the PQFN's exposed pad. ## Gate charge and drive voltage Total gate charge at 10 V is 179 nC. That is a moderate figure for a 100 A FET — the gate driver needs to source about 1.8 A peak to switch in 100 ns.","metaTitle":"IRFH8303TRPBF N-Channel MOSFET, 30V, 1.1 mOhm Rds(on)","metaDescription":"IRFH8303TRPBF N-channel HEXFET® MOSFET, 30V Vdss, 1.1 mOhm Rds(on) at 50A, 100A continuous drain. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®, StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®, StrongIRFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 150µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.1mOhm @ 50A, 10V","Power Dissipation (Max)":"3.7W (Ta), 156W (Tc)","Supplier Device Package":"8-PQFN (5x6)","Gate Charge (Qg) (Max) @ Vgs":"179 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"7736 pF @ 24 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"43A (Ta), 100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.86","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.86000","currency":"USD"},{"qty":10,"price":"$1.54600","currency":"USD"},{"qty":100,"price":"$1.23070","currency":"USD"},{"qty":500,"price":"$1.04140","currency":"USD"},{"qty":1000,"price":"$0.88361","currency":"USD"},{"qty":2000,"price":"$0.83943","currency":"USD"},{"qty":4000,"price":"$0.83943","currency":"USD"},{"qty":8000,"price":"$0.80787","currency":"USD"},{"qty":12000,"price":"$0.78113","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7d3a74e75af6791544ea41de8503e238.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFH8303TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFH8303TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}