{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFH7936TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFH7936TRPBF","canonicalUrl":"https://icboms.com/infineon/IRFH7936TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFH7936TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFH7936TRPBF, N-channel HEXFET MOSFET, 30 V drain-source, 20 A switching current, 4.8 mOhm Rds(on) at 10 V, 26 nC gate charge at 4.5 V, surface-mount, -55°C to 150°C junction temperature.","salesMarkdown":"## 4.8 mOhm at 10 V — conduction loss floor for a 20 A switch The IRFH7936TRPBF is an Infineon N-channel HEXFET MOSFET rated for 30 V drain-source and 20 A continuous switching current. Its on-resistance of 4.8 mOhm max at Vgs=10 V and Id=20 A sets the conduction loss floor for a power stage — at 20 A the I²R loss is under 2 W, which the 3.1 W package dissipation limit can handle with adequate copper on the drain pad. ## Gate charge and drive budget Total gate charge is 26 nC at Vgs=4.5 V, which is typical for a 20 A-class trench MOSFET. At a 100 kHz switching frequency the gate drive current needed is 2.6 mA average — a standard 1 A gate driver has ample headroom. The ±20 V Vgs rating allows the use of 12 V gate drives without clamping, though the 4.8 mOhm spec is guaranteed at 10 V. ## Thermal budget for 150°C junction The junction temperature range covers -55°C to 150°C, so the part can operate in under-hood automotive or industrial enclosures where ambient hits 85°C. The 3.1 W maximum power dissipation assumes a PCB with adequate copper area on the drain pad; in a 85°C ambient the allowable dissipation drops to about 1.5 W before reaching 150°C TJ.","metaTitle":"IRFH7936TRPBF N-Channel MOSFET, 30 V, 4.8 mOhm, HEXFET","metaDescription":"IRFH7936TRPBF N-channel HEXFET MOSFET, 30 V, 20 A, 4.8 mOhm Rds(on) at 10 V, 26 nC gate charge. Active production, surface-mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"3.1","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0024","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.35 V @ 50µA","switching_current_a":"20.0","Rds On (Max) @ Id, Vgs":"4.8mOhm @ 20 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"26 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.33","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9a4433e028a9fec4526807880085fdcc.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFH7936TRPBF at Vgs=10V?","answer":"The maximum on-resistance is 4.8 mOhm at Vgs=10 V and Id=20 A. This is the guaranteed upper limit at 25°C junction temperature; the typical value is lower, and the datasheet provides a normalised curve for derating at elevated TJ."},{"question":"What is the typical gate charge (Qg) of IRFH7936TRPBF?","answer":"The maximum gate charge is 26 nC at Vgs=4.5 V. This figure is used to calculate the gate drive current at the target switching frequency — for example, 26 nC at 100 kHz requires 2.6 mA average from the driver."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFH7936TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFH7936TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}