{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFH7934TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFH7934TRPBF","canonicalUrl":"https://icboms.com/infineon/IRFH7934TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFH7934TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® N-Channel MOSFET, IRFH7934TRPBF, 30 V, 24 A / 76 A, 3.5 mOhm, PQFN 8-pin, Surface Mount.","salesMarkdown":"## Rds(on) at junction temperature — the real switching loss number The IRFH7934TRPBF is an N-channel HEXFET MOSFET rated 30 V drain-source with a continuous drain current of 24 A and a pulsed current capability of 76 A. At 125°C junction, the on-resistance typically doubles, pushing closer to 7 mOhm. For a 10 A load, the conduction loss at 125°C is about 0.7 W, which combined with switching loss must stay inside the 3.1 W total power dissipation budget of the PQFN package. ## Gate charge and low-voltage drive compatibility The Vgs(th) threshold is 2.35 V maximum at 50 µA drain current, so the device turns on cleanly with a 3.3 V gate signal — but the Rds(on) at 4.5 V is not specified in this listing; expect it to be higher than the 10 V figure. The ±20 V maximum gate-source rating provides headroom against ringing on long gate traces. ## Temperature range and package integration The surface-mount footprint requires a solder-paste stencil with the correct aperture ratio for the pad — the datasheet's recommended land pattern is the reference.","metaTitle":"IRFH7934TRPBF Infineon N-Ch MOSFET, 30V 24A, 3.5mOhm PQFN","metaDescription":"IRFH7934TRPBF N-channel HEXFET MOSFET, 30V, 24A continuous / 76A pulsed, 3.5mOhm Rds(on) at 10V. Active production. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"3.1","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0031","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.35 V @ 50µA","switching_current_a":"24.0","Rds On (Max) @ Id, Vgs":"3.5mOhm @ 24 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.60","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f874f97177160619cfdf10c806b5f3ff.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFH7934TRPBF?","answer":"At elevated junction temperature, the on-resistance increases — expect roughly double at 125°C."},{"question":"Is IRFH7934TRPBF obsolete or active?","answer":"Active. Infineon lists the product status as current, with no discontinuation notice."},{"question":"What is the gate charge of IRFH7934TRPBF?","answer":"Total gate charge Qg is 30 nC maximum at 4.5 V gate-source voltage, making it suitable for low-voltage gate drivers."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFH7934TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFH7934TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}