{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFH7921TRPBF-IR","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFH7921TRPBF-IR","canonicalUrl":"https://icboms.com/infineon/IRFH7921TRPBF-IR","factsUrl":"https://icboms.com/api/mcp/products/IRFH7921TRPBF-IR","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® series, N-Channel Power MOSFET, IRFH7921TRPBF-IR, 30 V, 15 A, 8.5 mOhm, Surface Mount, Bulk.","salesMarkdown":"The IRFH7921TRPBF-IR is an N-Channel power MOSFET from Infineon's HEXFET® series, rated for 30 V drain-source and 15 A continuous switching current. Gate charge is 14 nC at 4.5 V, meaning the gate driver needs only about 1.4 mA average current to switch at 100 kHz — a low drive burden that suits microcontroller GPIO or a small gate-driver IC without a separate boost stage. ## Temperature grade and switching capability The 2.35 V typical threshold at 25 µA drain current means the MOSFET starts conducting well before the gate reaches 4.5 V, but the full 8.5 mOhm Rds(on) requires the 10 V drive level specified in the test condition. Maximum gate-source voltage is ±20 V, so a 12 V or 15 V gate drive rail is safe; a 24 V gate drive would exceed the abs-max and damage the oxide. The 0.0012 µF (1.2 nF) input capacitance is consistent with the 14 nC gate charge — a 10-ohm gate resistor yields a ~12 ns rise time, fast enough for a 500 kHz switching regulator without excessive ringing. The part is surface-mount in bulk packaging, so it feeds into standard reflow assembly lines without a moisture-sensitive handling exception (the bulk tube or tray format means no reel, but the reflow profile is the same as any Pb-free MOSFET). No pin-compatible second-source or successor is recorded — the HEXFET family is Infineon's own, and the parametric fit (30 V, 15 A, 8.5 mOhm, surface mount) is the selection anchor.","metaTitle":"IRFH7921TRPBF-IR Infineon N-Channel MOSFET, 30V 15A","metaDescription":"IRFH7921TRPBF-IR Infineon HEXFET N-Channel MOSFET, 30V, 15A, 8.5mOhm Rds(on). Active production, surface mount. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"3.1","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0012","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.35 V @ 25µA","switching_current_a":"15.0","Rds On (Max) @ Id, Vgs":"8.5mOhm @ 15 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"14 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.33","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8b570ee5e3dd95a6454a9d7740943f1e.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFH7921TRPBF-IR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFH7921TRPBF-IR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}