{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFH7914TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFH7914TRPBF","canonicalUrl":"https://icboms.com/infineon/IRFH7914TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFH7914TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® N-Channel MOSFET, IRFH7914TRPBF, 30 V, 15 A, 8.7 mOhm Rds(on) at 10 V, surface mount, active.","salesMarkdown":"## 30 V N-Channel HEXFET — Rds(on) and gate charge profile The IRFH7914TRPBF is a 30 V N-Channel MOSFET from Infineon's HEXFET family, rated for 15 A switching current with a maximum Rds(on) of 8.7 mOhm at 14 A and 10 V gate drive. Gate charge is 12 nC max at 4.5 V — this keeps the switching losses low in a 100–300 kHz DC-DC converter, where the driver's sourcing current and the Qg figure set the transition time. The ±20 V gate-source rating gives margin for ringing on the gate node in a hard-switched topology; a 10 V drive signal with 5 V of overshoot still stays inside the abs-max window. ## Thermal and package — what the junction temperature means for the board Maximum power dissipation is 3.1 W — this is the thermal budget at the board level.","metaTitle":"IRFH7914TRPBF N-Channel MOSFET, 30 V, 15 A, 8.7 mOhm","metaDescription":"Infineon IRFH7914TRPBF N-Channel HEXFET MOSFET, 30 V, 15 A, 8.7 mOhm Rds(on) at 10 V. Active production, surface mount. Request a quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"3.1","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0012","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.35 V @ 25µA","switching_current_a":"15.0","Rds On (Max) @ Id, Vgs":"8.7mOhm @ 14 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"12 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.25","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ebaad20cf63c76da7c89fcb5ee0b5598.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFH7914TRPBF at 10 V gate drive?","answer":"This is the on-resistance figure to use for conduction loss calculations in a 10 V driven design."},{"question":"What is the gate charge of IRFH7914TRPBF?","answer":"The maximum gate charge is 12 nC at 4.5 V gate-source voltage. This Qg value determines the drive current required from the gate driver at the target switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFH7914TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFH7914TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}