{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFH7446TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFH7446TRPBF","canonicalUrl":"https://icboms.com/infineon/IRFH7446TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFH7446TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET®, StrongIRFET™ series, IRFH7446TRPBF, N-Channel MOSFET, 40 V Vdss, 85 A Id, 3.3 mOhm Rds(on) max @ 50 A, 10 V, 98 nC Qg, 8-PQFN (5x6) surface mount, -55 to 150 °C.","salesMarkdown":"## 40 V N-channel in a 5x6 PQFN — the power-stage workhorse The IRFH7446TRPBF is an Infineon N-channel MOSFET from the HEXFET and StrongIRFET series, rated for 40 V drain-source and 85 A continuous drain current at a 25 °C case temperature. The 3.3 mOhm Rds(on) at 50 A and 10 V Vgs is the figure that sets the I²R conduction loss. At 50 A that is about 8.25 W of dissipation just from the channel, before switching losses are added. The 98 nC total gate charge at 10 V tells the BOM-cost engineer what gate-drive current is needed: at 100 kHz switching, the average gate current is 9.8 mA, well within a standard driver, but the peak current capability of the driver must still source that charge in the desired transition time. The 78 W maximum power dissipation at the case temperature is the thermal budget for the combined conduction and switching losses. ## Temperature range and application environments The 40 V drain-source rating provides headroom on 12 V and 24 V industrial and automotive buses, absorbing load-dump transients without avalanche breakdown.","metaTitle":"IRFH7446TRPBF N-Channel MOSFET, 40V 85A, 3.3mOhm Rds(on)","metaDescription":"Infineon IRFH7446TRPBF N-channel HEXFET MOSFET, 40 V drain-source, 85 A continuous drain, 3.3 mOhm Rds(on) max at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®, StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®, StrongIRFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-TQFN Exposed Pad","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.3mOhm @ 50A, 10V","Power Dissipation (Max)":"78W (Tc)","Supplier Device Package":"8-PQFN (5x6)","Gate Charge (Qg) (Max) @ Vgs":"98 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"3174 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"85A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.65","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.45000","currency":"USD"},{"qty":10,"price":"$1.18200","currency":"USD"},{"qty":100,"price":"$0.91970","currency":"USD"},{"qty":500,"price":"$0.77952","currency":"USD"},{"qty":1000,"price":"$0.63501","currency":"USD"},{"qty":2000,"price":"$0.59779","currency":"USD"},{"qty":4000,"price":"$0.59778","currency":"USD"},{"qty":8000,"price":"$0.56932","currency":"USD"},{"qty":12000,"price":"$0.54304","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d3652ff96c828a95150d4552df9ed14a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the IRFH7446TRPBF?","answer":"The maximum on-resistance is 3.3 mOhm at a drain current of 50 A and a gate-source voltage of 10 V. This is the spec that drives the conduction loss in a switching application."},{"question":"Is the IRFH7446TRPBF RoHS compliant?","answer":"Yes, it is listed as ROHS3 Compliant, meaning it meets the Restriction of Hazardous Substances directive including the exemption for lead in solder."},{"question":"What is the maximum drain current of the IRFH7446TRPBF?","answer":"The continuous drain current is rated at 85 A at a case temperature of 25°C. This rating is package-limited and requires adequate PCB thermal management to achieve."},{"question":"How does the IRFH7446TRPBF compare to the IPD50R950CEAUMA1?","answer":"The IPD50R950CEAUMA1 is a 500 V CoolMOS CE device with a 950 mOhm Rds(on) — a fundamentally different voltage class. The IRFH7446TRPBF is a low-voltage (40 V), high-current (85 A) part for power stages, while the peer targets high-voltage auxiliary supplies. They are not drop-in substitutes."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFH7446TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFH7446TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}