{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFH4210DTRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFH4210DTRPBF","canonicalUrl":"https://icboms.com/infineon/IRFH4210DTRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFH4210DTRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® series N-Channel Power MOSFET, IRFH4210DTRPBF, 25 V, 44 A switching current, 1.1 mOhm Rds(on), surface mount, Bulk package.","salesMarkdown":"The IRFH4210DTRPBF is an N-Channel HEXFET power MOSFET from Infineon. Its on-resistance is specified at 1.1 mOhm maximum when driven with 10 V on the gate at a 50 A drain current — that is the conduction loss floor for a high-current rail, so at 44 A switching current the I²R loss stays under 2.2 W, well within the 3.5 W power dissipation rating. ## Gate charge and drive budget Total gate charge is 77 nC at Vgs = 10 V. For a 100 kHz switching frequency the average gate drive current needed is 7.7 mA — the driver must source that plus the peak current to charge the input capacitance within the desired dead time. The gate threshold voltage is 2.1 V maximum at 100 µA drain current, so a 5 V logic-level gate drive turns the FET fully on, but the 1.1 mOhm Rds(on) spec is guaranteed only at 10 V. ## Temperature range and where it fits The 25 V drain-source rating gives headroom for 12 V and 24 V rails with margin for transients.","metaTitle":"Infineon IRFH4210DTRPBF N-Channel MOSFET, 1.1 mOhm Rds(on)","metaDescription":"Infineon IRFH4210DTRPBF N-Channel HEXFET MOSFET, 25 V, 44 A switching current, 1.1 mOhm Rds(on) at 10 V. Active production, surface mount. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","has_mpn":"IRFH4210","power_w":"3.5","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0048","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"25.0","Vgs(Th) (Max) @ Id":"2.1 V @ 100µA","switching_current_a":"44.0","Rds On (Max) @ Id, Vgs":"1.1mOhm @ 50 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"77 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.11","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the Vgs rating on this MOSFET?","answer":"The maximum gate-source voltage is ±20 V. The Rds(on) is specified at Vgs = 10 V, and the gate threshold is 2.1 V max at 100 µA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFH4210DTRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFH4210DTRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}