{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFB7545PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFB7545PBF","canonicalUrl":"https://icboms.com/infineon/IRFB7545PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFB7545PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET®, StrongIRFET™ IRFB7545PBF N-Channel MOSFET, 60V Vdss, 95A Id, 5.9mOhm Rds(on) at 57A, 10V, TO-220-3 through-hole, -55°C to 175°C junction.","salesMarkdown":"## 60 V, 95 A N-channel — what this TO-220 MOSFET delivers The Infineon IRFB7545PBF is an N-channel MOSFET from the HEXFET and StrongIRFET series, built for high-current switching in a through-hole TO-220-3 package. The 5.9 mOhm on-resistance at 57 A means conduction losses stay low enough that a modest heatsink on the TO-220 tab keeps the junction within the -55°C to 175°C operating range, even in a motor-drive or power-supply rail where the current is continuous. ## Gate drive and switching — sizing the driver The gate charge totals 110 nC at 10 V gate drive, with a recommended drive voltage window of 6 V to 10 V for minimum on-resistance. A gate driver delivering 1 A peak will switch this MOSFET in under 200 ns; a 100 mA logic-level output will be too slow and risk linear-mode heating during the transition. Input capacitance Ciss is 4010 pF at 25 V drain bias — the Miller plateau region is where the driver spends most of its switching energy, so the driver's sink current capability matters more than its source current for turn-off speed. ## Through-hole package — field-swappable without a hot-air station The TO-220-3 through-hole package means a standard soldering iron and solder sucker are all you need to swap this part on site. No hot-air rework station, no preheater — just clear the board, wick the pads, and drop the new device in. The tab is the drain, and the gate is the left pin when the part faces you with the tab to the back. The 125 W power dissipation at case temperature is the thermal design limit — in practice, the junction-to-case thermal resistance and the heatsink's thermal resistance set the real continuous current. A 5°C/W heatsink keeps the junction below 125°C at 95 A with 5.9 mOhm Rds(on). The 175°C Tj max is the absolute ceiling; continuous operation above 150°C Tj accelerates the bond-wire fatigue rate. ## Sourcing — quoted to order, no stock-holding claim Sourced through independent distribution channels. No official second-source or direct replacement is listed on the Infineon cross-reference; the IPD50R950CEAUMA1 is a 500 V CoolMOS surface-mount part that is not a functional substitute for this 60 V through-hole device.","metaTitle":"IRFB7545PBF HEXFET N-Ch MOSFET, 60V 95A TO-220","metaDescription":"IRFB7545PBF N-channel HEXFET MOSFET, 60V Vdss, 95A Id, 5.9mOhm Rds(on) at 57A. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®, StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®, StrongIRFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.7V @ 100µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"5.9mOhm @ 57A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"110 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"4010 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"95A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.09","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.96000","currency":"USD"},{"qty":10,"price":"$0.78600","currency":"USD"},{"qty":100,"price":"$0.61170","currency":"USD"},{"qty":500,"price":"$0.51848","currency":"USD"},{"qty":1000,"price":"$0.42236","currency":"USD"},{"qty":2000,"price":"$0.39761","currency":"USD"},{"qty":5000,"price":"$0.37867","currency":"USD"},{"qty":10000,"price":"$0.36119","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/92fbae74de0a21a8eae36ce22a0e7dbb.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the IRFB7545PBF?","answer":"Maximum Rds(on) is 5.9 mOhm at 57 A drain current with 10 V gate drive. The recommended drive voltage range for minimum on-resistance is 6 V to 10 V."},{"question":"Does the IRFB7545PBF have a replacement or equivalent part?","answer":"No official replacement or cross-reference is listed for this part. The IPD50R950CEAUMA1 is a 500 V CoolMOS surface-mount device with 950 mOhm Rds(on) — it is not a functional equivalent for this 60 V, 5.9 mOhm through-hole MOSFET."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFB7545PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFB7545PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}