{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFB7534PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFB7534PBF","canonicalUrl":"https://icboms.com/infineon/IRFB7534PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFB7534PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFB7534PBF, HEXFET® StrongIRFET™ series, N-Channel MOSFET, 60 V Vdss, 195 A Id, 2.4 mOhm Rds(on) at 10 V, 279 nC Qg, TO-220-3 (TO-220AB) through-hole, -55°C to 175°C junction temperature.","salesMarkdown":"## 60 V, 195 A N-channel — the conduction-loss benchmark Its 2.4 mOhm maximum on-resistance at 100 A, 10 V gate drive sets a low conduction-loss floor for high-current switching — motor drives, DC-DC converters, battery protection, and inverter stages where every milliohm drives heatsink size and efficiency. ## Gate charge and drive voltage — what the 279 nC Qg means for the driver Total gate charge is 279 nC at 10 V. That is a heavy gate load — a driver sourcing 2 A peak current will still take roughly 140 ns to charge the gate through the Miller plateau. For switching frequencies above 50 kHz, the gate-driver power dissipation and switching loss in the MOSFET itself become the design constraint, not the Rds(on). The drive voltage range listed as 6 V to 10 V for achieving minimum Rds(on) means a 5 V logic-level gate signal will not fully enhance the channel — expect higher on-resistance and slower switching if driven from 5 V. ## Package and thermal budget — TO-220AB in a 294 W dissipation envelope Housed in a TO-220-3 (TO-220AB) through-hole package, the IRFB7534PBF is rated for 294 W maximum power dissipation at case temperature 25°C. The 175°C TJ(max) gives headroom above the usual 150°C industrial limit, but the 294 W dissipation rating is only achievable with an adequate heatsink: the tab must be bolted to a thermal mass sized for the average power loss, not the peak. Input capacitance Ciss is 10034 pF at 25 V drain-source — typical for a die this large, and a factor in switching loss at higher frequencies. ROHS3 compliant. No stock-holding claim; quoted per BOM quantity.","metaTitle":"IRFB7534PBF MOSFET N-CH 60V 195A TO-220AB, 2.4 mOhm Rds(on)","metaDescription":"IRFB7534PBF N-channel MOSFET, 60V Vdss, 195A Id, 2.4 mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®, StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®, StrongIRFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.7V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2.4mOhm @ 100A, 10V","Power Dissipation (Max)":"294W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"279 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"10034 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"195A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.44","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.44000","currency":"USD"},{"qty":10,"price":"$2.02800","currency":"USD"},{"qty":100,"price":"$1.61440","currency":"USD"},{"qty":500,"price":"$1.36604","currency":"USD"},{"qty":1000,"price":"$1.15906","currency":"USD"},{"qty":2000,"price":"$1.10111","currency":"USD"},{"qty":5000,"price":"$1.05971","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d1bf44689db5cbd27f59e0ddf503ff06.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can IRFB7534PBF be used with a 5V gate drive?","answer":"The IRFB7534PBF's drive voltage range for achieving minimum Rds(on) is 6 V to 10 V. A 5 V gate signal will not fully enhance the channel, resulting in higher on-resistance and slower switching than the datasheet's rated 2.4 mOhm at 10 V."},{"question":"Does IRFB7534PBF require a heatsink?","answer":"Yes. The 294 W maximum power dissipation rating is at 25°C case temperature — achievable only with an adequate heatsink bolted to the TO-220AB tab. Without a heatsink, the junction temperature will exceed the 175°C maximum under any significant load."},{"question":"Is IRFB7534PBF lead-free and RoHS compliant?","answer":"Yes, the IRFB7534PBF is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFB7534PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFB7534PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}