{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFB5620PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFB5620PBF","canonicalUrl":"https://icboms.com/infineon/IRFB5620PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFB5620PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFB5620PBF N-channel MOSFET, 200 V drain-source, 25 A continuous drain, 72.5 mOhm Rds(on) at 10 V gate drive, TO-220AB package, -55°C to 175°C junction temperature.","salesMarkdown":"## 200 V N-channel MOSFET for 48 V bus and motor-drive rails The 200 V rating gives a comfortable 2× derating margin on a 48 V bus and headroom on 72 V systems, making it a common choice for motor drives, battery chargers, and DC-DC converters where the TO-220 package allows straightforward heatsinking. Maximum on-resistance is 72.5 mOhm at 15 A drain current with 10 V gate drive. At 25 A continuous drain, the I²R conduction loss reaches roughly 45 W — the 144 W package dissipation rating at case temperature provides headroom, but the heatsink must be sized for the actual duty cycle and ambient. The 38 nC total gate charge at 10 V keeps gate-drive power modest for hard-switched topologies up to about 100 kHz. ## 175 °C junction temperature — thermal margin for industrial environments The -55°C to 175°C junction temperature range exceeds the typical 125 °C industrial limit, giving 50 °C of margin for high-ambient or overload conditions. The 1710 pF input capacitance at 50 V drain-source is moderate — a 1 A gate driver can charge the gate in under 40 ns, though the designer should verify switching losses at the target frequency.","metaTitle":"IRFB5620PBF MOSFET N-CH 200V 25A TO-220AB, Active","metaDescription":"IRFB5620PBF N-channel MOSFET, 200 V Vdss, 25 A continuous drain, 72.5 mOhm Rds(on) at 10 V. TO-220AB, -55°C to 175°C. Active production, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"72.5mOhm @ 15A, 10V","Power Dissipation (Max)":"144W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"38 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"1710 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.51","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.51000","currency":"USD"},{"qty":10,"price":"$3.15600","currency":"USD"},{"qty":100,"price":"$2.53630","currency":"USD"},{"qty":500,"price":"$2.08384","currency":"USD"},{"qty":1000,"price":"$1.73652","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/db6a13c08a7c29f7d74d2d71e6dd0e27.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFB5620PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFB5620PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}