{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFB4110PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFB4110PBF","canonicalUrl":"https://icboms.com/infineon/IRFB4110PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFB4110PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRFB4110PBF, N-Channel MOSFET, 100 Vdss, 120 A continuous drain, 4.5 mOhm Rds(on) at 10 V, 210 nC gate charge, TO-220AB through-hole package, -55°C to 175°C.","salesMarkdown":"## 100 V, 120 A N-channel — the HEXFET that handles the heavy bus The IRFB4110PBF: This is a through-hole TO-220AB part — the three-lead package bolts to a heatsink with the tab as the drain connection. The 4.5 mOhm Rds(on) at Vgs=10 V is the number to design around for steady-state conduction. At 75 A the dissipation is 25 W in the channel alone — that heat has to flow through the TO-220 tab to a heatsink with a thermal resistance low enough to keep the junction below 175°C. Gate charge is 210 nC at 10 V. Input capacitance is 9620 pF at 50 V drain-source. Maximum gate threshold is 4 V at 250 µA drain current. The gate drive must exceed 10 V to reach rated Rds(on).","metaTitle":"IRFB4110PBF HEXFET N-Ch MOSFET, 100V, 120A, TO-220AB","metaDescription":"IRFB4110PBF N-channel HEXFET MOSFET, 100 Vdss, 120 A continuous drain, 4.5 mOhm Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.5mOhm @ 75A, 10V","Power Dissipation (Max)":"370W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"210 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"9620 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.94","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.34000","currency":"USD"},{"qty":10,"price":"$3.64300","currency":"USD"},{"qty":100,"price":"$2.94730","currency":"USD"},{"qty":500,"price":"$2.61986","currency":"USD"},{"qty":1000,"price":"$2.24325","currency":"USD"},{"qty":2000,"price":"$2.11226","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2d493d909cf60d5d1eef4fc69e62d451.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFB4110PBF?","answer":"Maximum on-resistance is 4.5 mOhm at 75 A drain current with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFB4110PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFB4110PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}