{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFB3306PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFB3306PBF","canonicalUrl":"https://icboms.com/infineon/IRFB3306PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFB3306PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, IRFB3306PBF, N-Channel MOSFET, 60 V Vdss, 120 A Id, 4.2 mOhm Rds(on) at 10 V, 120 nC Qg, TO-220AB through-hole, -55°C to 175°C.","salesMarkdown":"## 60 V, 120 A N-channel HEXFET — the conduction-loss floor The Infineon IRFB3306PBF is a 60 V, 120 A N-channel power MOSFET from the HEXFET® series, built on planar stripe technology and housed in a TO-220AB through-hole package. It is designed for high-current switching and linear applications where low on-resistance and high junction temperature tolerance are required. ## 120 nC gate charge — switching-frequency budget Total gate charge Qg is 120 nC at 10 V. The 4520 pF input capacitance at 50 V drain-source requires a driver capable of high peak current during the Miller plateau. The 4 V gate-threshold maximum at 150 µA drain current means the device is fully enhanced with a 10 V drive, but the threshold spread leaves no headroom for 5 V logic drive — a 10 V rail is required to hit the rated Rds(on). It is suitable for avionics power supplies, downhole instrumentation, and satellite bus converters where the ambient exceeds the standard 125°C limit of industrial-grade MOSFETs. At 175°C junction, the Rds(on) roughly doubles from the 25°C value — expect about 8.4 mOhm at the hot corner, which must be factored into the thermal design for continuous operation above 125°C. ## TO-220AB — through-hole thermal interface The TO-220AB package provides a metal tab for direct heatsink mounting. The 230 W power dissipation rating at case temperature assumes the tab is bolted to an infinite heatsink — real-world derating follows the junction-to-case thermal resistance, which is not listed here but typically 0.5-0.8 °C/W for this package class. The through-hole mounting suits point-to-point wiring, terminal-block assemblies, and board-level replacement in existing designs where surface-mount reflow is not an option.","metaTitle":"IRFB3306PBF HEXFET N-Ch 60V 120A TO-220AB MOSFET","metaDescription":"IRFB3306PBF HEXFET N-channel MOSFET, 60V Vdss, 120A Id, 4.2 mOhm Rds(on) at 10V. TO-220AB through-hole. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 150µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.2mOhm @ 75A, 10V","Power Dissipation (Max)":"230W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"120 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"4520 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.99","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.99000","currency":"USD"},{"qty":10,"price":"$1.65600","currency":"USD"},{"qty":100,"price":"$1.31840","currency":"USD"},{"qty":500,"price":"$1.11556","currency":"USD"},{"qty":1000,"price":"$0.94653","currency":"USD"},{"qty":2000,"price":"$0.89921","currency":"USD"},{"qty":5000,"price":"$0.86540","currency":"USD"},{"qty":10000,"price":"$0.83675","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/af43db0bc987cdc9962334a05c83d0cf.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the IRFB3306PBF equivalent MOSFET?","answer":"The IPD50R950CEAUMA1 is a CoolMOS CE device with 500 V Vdss and 4.3 A Id — it is a different voltage and current class and is not a functional equivalent for the 60 V, 120 A IRFB3306PBF."},{"question":"Is the IRFB3306PBF compatible with a 48 V DC-DC converter?","answer":"Yes. The 60 V drain-source rating provides 12 V of headroom above a 48 V nominal bus, which is adequate for 48 V telecom and battery-converter applications with typical transient peaks up to 55 V. The 120 A continuous current rating and 4.2 mOhm Rds(on) make it suitable for the primary-side switch in a 48 V to 12 V or 48 V to 5 V isolated converter at power levels up to several kilowatts."},{"question":"What is the maximum junction temperature of the IRFB3306PBF?","answer":"This places the device in the military-temperature grade, suitable for high-reliability and extended-temperature environments."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFB3306PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFB3306PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}