{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFB3206PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFB3206PBF","canonicalUrl":"https://icboms.com/infineon/IRFB3206PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFB3206PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFB3206PBF HEXFET N-Channel MOSFET, 60 V Vdss, 120 A continuous drain, 3 mOhm Rds(on) max at 75 A, 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## 60 V, 120 A N-channel HEXFET in TO-220 The IRFB3206PBF: It comes in a TO-220-3 through-hole package, the standard footprint for medium-power through-hole designs — motor drives, DC-DC converters, battery protection, and synchronous rectification stages. ## 3 mOhm Rds(on) — what it means for conduction loss Maximum on-resistance is 3 mOhm at 75 A drain current with 10 V gate drive. At 75 A the conduction loss is I²R = 16.9 W — that is the floor the heatsink must pull away. The 10 V drive voltage is the recommended gate swing for the lowest Rds(on); running at 5 V gate drive leaves the channel only partially enhanced, raising Rds(on) by roughly 2×. ## Gate charge and switching speed Total gate charge is 170 nC at 10 V. For a 100 kHz hard-switching converter the average gate-drive current is Qg × fsw = 17 mA — within the capability of a standard 1 A gate-driver IC, but the peak current (Vg / Rg) still needs a low-impedance path to keep the Miller plateau short. Input capacitance Ciss is 6540 pF at 50 V Vds, which sets the driver's turn-on delay. ## Temperature range and package reality Junction temperature range is -55°C to 175°C — a full military-temperature-span rating that suits avionics, down-hole tools, and under-hood automotive environments where ambient can exceed 125°C. The TO-220AB package (TO-220-3 variant) has a metal tab that carries the drain; the tab must be electrically isolated or tied to the drain rail. Maximum power dissipation is 300 W at case temperature — that figure assumes an infinite heatsink; real-world derating follows the thermal resistance junction-to-case.","metaTitle":"IRFB3206PBF HEXFET N-Ch MOSFET, 60 V, 120 A, 3 mOhm","metaDescription":"IRFB3206PBF N-channel HEXFET MOSFET, 60 V Vdss, 120 A continuous drain, 3 mOhm Rds(on) max at 75 A. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 150µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"3mOhm @ 75A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"170 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"6540 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.24","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.24000","currency":"USD"},{"qty":10,"price":"$1.85900","currency":"USD"},{"qty":100,"price":"$1.47990","currency":"USD"},{"qty":500,"price":"$1.25220","currency":"USD"},{"qty":1000,"price":"$1.06248","currency":"USD"},{"qty":2000,"price":"$1.00936","currency":"USD"},{"qty":5000,"price":"$0.97141","currency":"USD"},{"qty":10000,"price":"$0.93925","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ce2b74eb1d577c7b1c5460a3d0435410.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFB3206PBF?","answer":"Maximum Rds(on) is 3 mOhm at 75 A drain current with 10 V gate drive."},{"question":"What are the specifications of IRFB3206PBF?","answer":"N-channel HEXFET MOSFET, 60 V Vdss, 120 A continuous drain at 25°C, 3 mOhm Rds(on) max at 75 A and 10 V, 170 nC gate charge, 6540 pF input capacitance, -55°C to 175°C junction range, TO-220-3 through-hole package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFB3206PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFB3206PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}