{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFAF40","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFAF40","canonicalUrl":"https://icboms.com/infineon/IRFAF40","factsUrl":"https://icboms.com/api/mcp/products/IRFAF40","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® N-Channel MOSFET, IRFAF40, 900 V, 4.3 A, 2.9 Ohm, Through Hole, Bulk.","salesMarkdown":"## 900 V N-Channel MOSFET with hermetic package The IRFAF40 is an N-Channel enhancement-mode MOSFET from Infineon's HEXFET® series, rated for 900 V drain-source voltage and 4.3 A continuous switching current. The through-hole package (likely a TO-254AA hermetic can) suits high-reliability and military/aerospace boards where solder-joint inspection and rework are standard. ## Gate drive and switching budget The gate-source voltage is rated ±20 V, so the drive rail must stay within that window — a 15 V gate drive is safe, but a 24 V industrial supply needs a zener clamp or series resistor to protect the oxide. The maximum gate charge is 120 nC at Vgs=10 V, which means the driver must supply 120 nC per switching cycle; at 100 kHz that is 12 mA average gate current, well within a standard gate-driver IC's capability. The threshold voltage is 4 V maximum at 250 µA drain current — the gate must be driven above 4 V to fully enhance the channel. A 10 V drive is typical to achieve the specified Rds(on) and minimise conduction losses.","metaTitle":"IRFAF40 Infineon N-Channel MOSFET, 900V, 4.3A, TO-254AA","metaDescription":"IRFAF40 N-channel HEXFET MOSFET, 900V Vds, 4.3A switching, 2.9 Ohm Rds(on), -55 to 150°C TJ. Active lifecycle. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"125.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0015","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"900.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"4.3","Rds On (Max) @ Id, Vgs":"2.9Ohm @ 4.3 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"120 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.63","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"How can I order IRFAF40 or check its availability?","answer":"The IRFAF40 is an active-production part from Infineon Technologies. No stock-holding claim is made — each order is sourced to the BOM quantity."},{"question":"What is the IRFAF40's maximum gate-source voltage?","answer":"The Vgs rating is ±20 V. The gate drive rail must stay within this window to avoid oxide breakdown."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFAF40","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFAF40 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}