{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFAC30","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFAC30","canonicalUrl":"https://icboms.com/infineon/IRFAC30","factsUrl":"https://icboms.com/api/mcp/products/IRFAC30","rawCanonicalId":null},"summary":{"shortDescription":"IRFAC30, N-Channel HEXFET® MOSFET, 600 V, 3.6 A, 2.5 Ohm Rds(on) @ 3.6 A, 10 V, ±20 V Vgs, 75 W, Through Hole, Bulk, -55°C to 150°C TJ.","salesMarkdown":"## 600 V N-channel HEXFET — hermetic, through-hole The IRFAC30 is a 600 V, 3.6 A N-channel power MOSFET from the HEXFET series, built in a hermetic through-hole package. It is designed for high-reliability applications where sealed-device construction is required — avionics, satellite power systems, downhole instrumentation, and military-grade power converters. The 2.5 Ohm maximum on-resistance at 3.6 A, 10 V gate drive sets the conduction loss baseline for the BOM. ## Rds(on) and gate drive — what they mean for the design At 2.5 Ohm max with 10 V gate drive, this part is a standard-threshold MOSFET. The 4 V threshold at 250 µA is typical for the family. The 38 nC total gate charge at 10 V is moderate. ## Temperature range and package — application fit Rated for a junction temperature range of -55°C to 150°C, the IRFAC30 covers military and industrial thermal environments. The hermetic construction (the description notes N-CHANNEL HERMETIC MOS HEXFET) means the die is sealed against moisture and contamination — a requirement for long-life mission equipment and sealed enclosures where conformal coating alone is insufficient. The through-hole mounting suits point-to-point wiring, terminal blocks, or high-vibration chassis mounting where a solder joint alone is not the primary mechanical retention.","metaTitle":"IRFAC30 N-Channel MOSFET, 600V, 2.5 Ohm Rds(on), HEXFET","metaDescription":"IRFAC30 N-Channel HEXFET MOSFET: 600 V, 3.6 A, 2.5 Ohm Rds(on), hermetic through-hole, -55 to 150°C. Active, available to order. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"75.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0006","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"600.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"3.6","Rds On (Max) @ Id, Vgs":"2.5Ohm @ 3.6 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"38 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.71","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/0fuxt5xyqy/IRSDS04496-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFAC30?","answer":"The maximum on-resistance is 2.5 Ohm at a drain current of 3.6 A with a 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFAC30","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFAC30 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}