{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF9Z34NPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF9Z34NPBF","canonicalUrl":"https://icboms.com/infineon/IRF9Z34NPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF9Z34NPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF9Z34NPBF, P-Channel MOSFET, 55V Vdss, 19A Id, 100mOhm Rds(on) @ 10V, TO-220AB, -55°C to 175°C.","salesMarkdown":"## P-channel high-side switch for 12–48 V rails The Infineon IRF9Z34NPBF is a P-channel HEXFET MOSFET in a TO-220AB through-hole package, rated for 55 V drain-source breakdown and 19 A continuous drain current at 25°C case temperature. P-channel polarity means it can switch the positive rail directly without a dedicated gate-drive boost circuit — useful in battery protection, load disconnect, and reverse-polarity blocking where the load returns to ground. The 100 mOhm maximum on-resistance at 10 V gate drive and 10 A load sets conduction loss at roughly 10 W at full current; that figure drives the heatsink choice and board layout for the 68 W package limit. Gate threshold voltage maximum is 4 V at 250 µA drain current. The datasheet specifies 10 V gate drive to achieve the rated Rds(on).","metaTitle":"IRF9Z34NPBF P-Channel MOSFET, 55V 19A TO-220AB","metaDescription":"IRF9Z34NPBF HEXFET P-Channel MOSFET: 55V Vdss, 19A Id, 100mOhm Rds(on) at 10V. TO-220AB, -55°C to 175°C. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"100mOhm @ 10A, 10V","Power Dissipation (Max)":"68W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"620 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"19A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.06","priceTiers":[{"qty":1,"price":"$1.06000","currency":"USD"},{"qty":10,"price":"$0.94900","currency":"USD"},{"qty":100,"price":"$0.73980","currency":"USD"},{"qty":500,"price":"$0.61114","currency":"USD"},{"qty":1000,"price":"$0.48248","currency":"USD"},{"qty":2000,"price":"$0.45032","currency":"USD"},{"qty":5000,"price":"$0.42780","currency":"USD"},{"qty":10000,"price":"$0.41955","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f754530957a33c3095ec7221ba0a41c1.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF9Z34NPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of IRF9Z34NPBF?","answer":"Maximum on-resistance is 100 mOhm at 10 A drain current with 10 V gate-to-source drive. This is the figure used for conduction-loss calculations in a high-side switch or load-disconnect application."},{"question":"What is the maximum drain current of IRF9Z34NPBF?","answer":"Continuous drain current is 19 A at 25°C case temperature. This rating assumes the case is held at 25°C; derate for higher ambient temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF9Z34NPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF9Z34NPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}