{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF9530NSTRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF9530NSTRLPBF","canonicalUrl":"https://icboms.com/infineon/IRF9530NSTRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF9530NSTRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon / International Rectifier HEXFET P-Channel MOSFET, IRF9530NSTRLPBF, 100 V Vdss, 14 A Id, 200 mOhm Rds(on) at 10 V, 58 nC Qg, D2PAK (TO-263) surface mount, -55 to 175 °C.","salesMarkdown":"## P-Channel 100 V switch for high-side loads The IRF9530NSTRLPBF is a P-Channel enhancement-mode HEXFET MOSFET in the D2PAK (TO-263) surface-mount package, rated for 100 V drain-source and 14 A continuous drain current. It is designed for high-side switching applications where a P-Channel device eliminates the need for a charge-pump gate driver — the gate is simply pulled low to turn the FET on. Maximum on-resistance is 200 mOhm at a gate-source voltage of 10 V and 8.4 A drain current. This is the figure to use for worst-case conduction loss calculations at the rated gate drive — at lower Vgs the Rds(on) rises, so the 10 V drive rail is effectively mandatory to achieve the rated current. ## Thermal limits and package power dissipation Power dissipation is rated at 3.8 W at 25 °C ambient (Ta) and 79 W at the case (Tc). The large D2PAK tab carries the heat — the board copper area under the tab sets the real thermal resistance. For continuous 14 A operation, a heatsink or a substantial PCB copper pour is expected. ## Gate charge and switching speed Total gate charge at 10 V is 58 nC, with an input capacitance of 760 pF at 25 V drain-source. This is a moderate gate charge for a 14 A FET — a standard gate driver with a few hundred mA peak current will switch it in the tens of nanoseconds. The 58 nC figure is the basis for the driver's average current budget at the target switching frequency.","metaTitle":"IRF9530NSTRLPBF P-Channel MOSFET, 100V 14A D2PAK","metaDescription":"IRF9530NSTRLPBF P-Channel HEXFET MOSFET, 100V Vdss, 14A Id, 200mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"200mOhm @ 8.4A, 10V","Power Dissipation (Max)":"3.8W (Ta), 79W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"58 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"760 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"14A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.53","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.53000","currency":"USD"},{"qty":10,"price":"$1.36500","currency":"USD"},{"qty":100,"price":"$1.06430","currency":"USD"},{"qty":800,"price":"$0.84254","currency":"USD"},{"qty":1600,"price":"$0.66516","currency":"USD"},{"qty":2400,"price":"$0.62082","currency":"USD"},{"qty":5600,"price":"$0.58978","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/911431db212d0056f34f66b154f58748.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IRF9530NSTRLPBF equivalent to IRF9530NPBF?","answer":"IRF9530NPBF is the through-hole TO-220 version of the same die; IRF9530NSTRLPBF is the surface-mount D2PAK variant. The electrical specs (100 V, 14 A, 200 mOhm) are identical, but the packages are not pin-compatible — the D2PAK has a different footprint and thermal tab."},{"question":"What is the gate charge of IRF9530NSTRLPBF?","answer":"The maximum total gate charge at 10 V gate-source is 58 nC. This is the charge the gate driver must supply to turn the FET on; at 100 kHz switching, the average gate-drive current is 5.8 mA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF9530NSTRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF9530NSTRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}