{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF9393TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF9393TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF9393TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF9393TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRF9393TRPBF, P-Channel MOSFET, 30 V Vdss, 9.2 A Id, 13.3 mOhm Rds(on) at 20 Vgs, 8-SOIC surface mount, -55°C to 150°C junction temperature.","salesMarkdown":"## P-Channel load switch for 30 V rails The Infineon IRF9393TRPBF is a HEXFET P-Channel MOSFET rated for 30 V drain-to-source and 9.2 A continuous drain current at 25°C. On-resistance is 13.3 mOhm maximum with a 20 V gate drive. ## Gate drive and switching considerations Gate charge is 38 nC at 10 V. It is ROHS3 compliant.","metaTitle":"IRF9393TRPBF P-Channel MOSFET, 30 V, 9.2 A, 13.3 mOhm","metaDescription":"IRF9393TRPBF HEXFET P-Channel MOSFET, 30 V drain-source, 9.2 A continuous drain, 13.3 mOhm Rds(on). Active lifecycle, surface-mount 8-SOIC.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.4V @ 25µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"13.3mOhm @ 9.2A, 20V","Power Dissipation (Max)":"2.5W (Ta)","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"38 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1110 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V, 20V","Current - Continuous Drain (Id) @ 25°C":"9.2A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.73","priceTiers":[{"qty":1,"price":"$0.73000","currency":"USD"},{"qty":10,"price":"$0.64300","currency":"USD"},{"qty":100,"price":"$0.49300","currency":"USD"},{"qty":500,"price":"$0.38976","currency":"USD"},{"qty":1000,"price":"$0.31181","currency":"USD"},{"qty":2000,"price":"$0.28420","currency":"USD"},{"qty":4000,"price":"$0.28420","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a8481011eac25a816d1b60a003008a1c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF9393TRPBF/alternatives.json"},"ai":{"faq":[{"question":"What are the electrical specifications of IRF9393TRPBF?","answer":"It is a P-Channel MOSFET with 30 V drain-to-source voltage, 9.2 A continuous drain current at 25°C, 13.3 mOhm maximum on-resistance at 20 V gate drive, and a -55°C to 150°C junction temperature range."},{"question":"Is IRF9393TRPBF compatible with 3.3 V logic gate drive?","answer":"The gate threshold voltage is 2.4 V maximum at 25 µA, so a 3.3 V logic output can turn the MOSFET on, but Rds(on) will be higher than the rated 13.3 mOhm (specified at 10 V and 20 V drive). For full conduction, a gate driver that provides at least 10 V is recommended."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF9393TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF9393TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}