{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF9230","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF9230","canonicalUrl":"https://icboms.com/infineon/IRF9230","factsUrl":"https://icboms.com/api/mcp/products/IRF9230","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® P-Channel MOSFET, IRF9230, 200 V, 6.5 A, 940 mOhm, Through Hole, TO-220, Bulk.","salesMarkdown":"## P-Channel, 200 V — the high-side switch for a 150 V rail The IRF9230 is a P-Channel HEXFET® MOSFET rated for 200 V drain-source and 6.5 A continuous switching current. That 200 V rating means it comfortably switches a 150 V DC bus with margin — the derating curve from the datasheet keeps the junction below the 150 °C max when the load is continuous. Rds(on) is 940 mOhm max at 6.5 A with a 10 V gate drive. At full load that's about 40 W conduction loss — the 75 W package power rating (TO-220 through-hole) handles it with a reasonable heatsink, but the thermal pad area on the PCB sets the actual junction temperature. ## Gate drive and switching — what the ±20 V Vgs means for the driver The gate-source voltage is rated ±20 V absolute max. A 12 V gate drive is typical for this P-channel — the threshold is 4 V max at 250 µA, so a standard 12 V supply turns it on hard without exceeding the oxide stress limit. Total gate charge is 31 nC at 10 V. Driving it at 100 kHz draws about 3.1 mA from the gate driver — well within a small dedicated driver IC's output capability. The 700 pF input capacitance (Ciss) is the real load the driver sees per cycle. That covers outdoor telecom cabinets, motor drive compartments, and engine-bay electronics where ambient can hit 105 °C.","metaTitle":"IRF9230 P-Channel HEXFET, 200 V, 6.5 A, TO-220","metaDescription":"Infineon IRF9230 P-Channel MOSFET, 200 V, 6.5 A, 940 mOhm Rds(on), active production. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"75.0","Fet Type":"P-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0007","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"200.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"6.5","Rds On (Max) @ Id, Vgs":"940mOhm @ 6.5 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"31 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.58","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d21439adb2ca0f4b040ae96ded93f1e7.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF9230","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF9230 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}