{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF840APBF","brand":"Vishay","brandSlug":"vishay","productSlug":"IRF840APBF","canonicalUrl":"https://icboms.com/vishay/IRF840APBF","factsUrl":"https://icboms.com/api/mcp/products/IRF840APBF","rawCanonicalId":null},"summary":{"shortDescription":"Vishay IRF840APBF, N-Channel MOSFET, 500 V drain-source, 8 A continuous drain, 850 mOhm Rds(on) at 10 V, TO-220AB through-hole package, -55 to 150°C junction temperature.","salesMarkdown":"## 500 V, 8 A N-channel — the TO-220 workhorse for offline power stages The IRF840APBF is a Vishay N-channel power MOSFET in a TO-220AB through-hole package, rated for 500 V drain-source breakdown and 8 A continuous drain current at 25°C case temperature. It targets high-voltage switching applications such as flyback converters, offline AC-DC power supplies, and motor drive circuits where the 500 V blocking voltage provides margin for rectified 240 VAC rails. With a maximum on-resistance of 850 mOhm at 4.8 A and 10 V gate drive, conduction losses stay manageable for loads up to a few amps. The 38 nC total gate charge keeps the gate-drive power low at moderate switching frequencies — a practical fit for 50–100 kHz hard-switched topologies. ## Gate drive and switching — what the numbers mean at the bench The 10 V gate drive voltage is specified for both the maximum and minimum Rds(on) — this part expects a full 10 V gate signal to achieve the rated on-resistance. The gate threshold is 4 V maximum at 250 µA drain current, so a 5 V logic-level gate drive will not fully enhance the channel; plan for a dedicated gate driver or a bootstrap supply above 10 V. Input capacitance is 1018 pF typical at 25 V drain-source — a moderate figure that does not require a heroic gate-driver for switching frequencies under 100 kHz. The 38 nC gate charge translates to roughly 3.8 mA average gate-drive current at 100 kHz, well within the capability of a standard MOSFET driver like the TC4427. ## Thermal handling and package rework Maximum power dissipation is 125 W at the case, but the real thermal limit depends on the heatsink. The TO-220AB package has a metal tab that must be electrically isolated or connected to the drain node — the tab is the drain. For rework, the through-hole leads are easy to desolder with a solder sucker or wick; the tab can be soldered to a PCB pad or bolted to a heatsink with a TO-220 mounting kit.","metaTitle":"IRF840APBF N-Channel MOSFET, 500V 8A TO-220AB","metaDescription":"IRF840APBF N-channel MOSFET, 500V Vdss, 8A Id, 850mOhm Rds(on) at 10V. TO-220AB package. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"850mOhm @ 4.8A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"38 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1018 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.97","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.97000","currency":"USD"},{"qty":10,"price":"$1.77300","currency":"USD"},{"qty":100,"price":"$1.42530","currency":"USD"},{"qty":500,"price":"$1.17106","currency":"USD"},{"qty":1000,"price":"$0.97031","currency":"USD"},{"qty":2000,"price":"$0.90339","currency":"USD"},{"qty":5000,"price":"$0.87556","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/330a284edd006eea9c5e227d7829217d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IRF840APBF RoHS compliant?","answer":"Yes, the IRF840APBF is ROHS3 compliant, meeting current EU and global environmental requirements for lead-free soldering processes."},{"question":"What is the closest functional second-source for IRF840APBF?","answer":"The IRFP440PBF is a close functional peer — also a 500 V N-channel MOSFET in a through-hole package, with 8.8 A continuous drain current and similar 850 mOhm Rds(on). However, the IRFP440PBF has a ±20 V maximum gate-source rating (vs ±30 V on the IRF840APBF) and a higher 63 nC gate charge. Verify pin compatibility and thermal performance in your specific layout before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/vishay/IRF840APBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/vishay/IRF840APBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}