{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF8327STRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF8327STRPBF","canonicalUrl":"https://icboms.com/infineon/IRF8327STRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF8327STRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies IRF8327STRPBF N-Channel MOSFET, DirectFET package, 30 V drain-source, 14 A continuous drain current, 7.3 mOhm Rds(on) at 10 V, surface mount.","salesMarkdown":"## 7.3 mOhm at 14 A — the switching-loss anchor The IRF8327STRPBF is an N-channel MOSFET rated for 30 V drain-source and 14 A continuous drain current. The on-resistance is 7.3 mOhm maximum at Vgs = 10 V and Id = 14 A — this is the conduction loss figure a layout engineer multiplies by the duty cycle to size the copper pour and estimate junction temperature at the target switching frequency. ## 14 nC gate charge — drive budget at frequency Gate charge (Qg) is 14 nC maximum at Vgs = 4.5 V. For a 500 kHz buck stage, the average gate drive current is 14 nC × 500 kHz = 7 mA — well within a standard gate-driver output. The threshold voltage (Vgs(th)) is 2.4 V maximum at 25 µA, meaning a 3.3 V logic-level drive turns the FET fully on with margin above the threshold. The ±20 V Vgs rating gives headroom for a 12 V gate-drive rail without clamping — the oxide stress stays inside the abs-max envelope even during start-up transients. ## 150 °C junction — thermal ceiling for a hot-switch design Operating junction temperature spans -40 °C to 150 °C. The 2.2 W maximum power dissipation is the thermal budget at 25 °C ambient; at 85 °C ambient the budget derates by roughly 40% (per the typical derating curve for a DirectFET package on a 1-inch² copper pad). A rework-lab tech should pre-bake the parts at 125 °C for 48 hours if the moisture-barrier bag is punctured — the exposed-paddle DirectFET is MSL 1 sensitive and absorbs moisture through the backside die attach.","metaTitle":"IRF8327STRPBF N-Ch 30V 14A DirectFET MOSFET, 7.3mOhm","metaDescription":"Infineon IRF8327STRPBF N-channel MOSFET, 30 V, 14 A continuous, 7.3 mOhm Rds(on) at 10 V. Active production. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","power_w":"2.2","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0014","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.4 V @ 25µA","switching_current_a":"14.0","Rds On (Max) @ Id, Vgs":"7.3mOhm @ 14 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"14 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.59","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7da439da62ed90c1f9db3b03323326fe.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of IRF8327STRPBF and why does it matter?","answer":"Gate charge (Qg) is 14 nC maximum at Vgs = 4.5 V. This figure determines the average drive current the gate driver must supply at the operating frequency — for example, 14 nC at 500 kHz draws 7 mA from the driver output, well within a standard totem-pole driver's capability."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF8327STRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF8327STRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}