{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF8308MTRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF8308MTRPBF","canonicalUrl":"https://icboms.com/infineon/IRF8308MTRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF8308MTRPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF8308MTRPBF, Infineon HEXFET N-channel trench MOSFET, 30 V, 27 A, 2.5 mOhm Rds(on) at 10 V, 42 nC gate charge at 4.5 V, DIRECTFET MV package, surface mount, -40°C to 150°C junction.","salesMarkdown":"## 2.5 mOhm at 10 V — the number that drives the BOM The IRF8308MTRPBF is an N-channel trench MOSFET from the HEXFET series, rated 30 V drain-source and 27 A continuous drain current. In a 10 A load, the I²R loss is 0.25 W at 25 °C junction; at 125 °C the Rds(on) roughly doubles, so budget 0.5 W for the thermal analysis. ## Gate charge and switching loss budget Gate charge (Qg) is 42 nC at 4.5 V. For a 500 kHz switching regulator, the gate-drive power is Qg × Vgs × fsw = 42 nC × 4.5 V × 500 kHz = 94.5 mW — well within the capability of a standard MOSFET driver, but the driver's output current must source that charge in the target rise time. The low Qg also keeps the Miller plateau short, reducing cross-conduction losses in half-bridge topologies. ## Junction temperature and environment The 150 °C Tj(max) gives headroom for transient overloads and high-side switching in hot environments.","metaTitle":"IRF8308MTRPBF N-Channel MOSFET, 2.5 mOhm Rds(on) at 10 V","metaDescription":"IRF8308MTRPBF N-channel HEXFET trench MOSFET, 30 V, 27 A, 2.5 mOhm Rds(on) at 10 V. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"2.8","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0044","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.35 V @ 100µA","switching_current_a":"27.0","Rds On (Max) @ Id, Vgs":"2.5mOhm @ 27 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"42 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.06","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/da0b6169bd3b069fc6cc228000a4c8bd.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF8308MTRPBF at 10 V gate drive?","answer":"The maximum Rds(on) is 2.5 mOhm at 10 V gate-source voltage and 27 A drain current. This is the value used for conduction loss calculations in the power stage."},{"question":"What is the maximum drain current and voltage rating of IRF8308MTRPBF?","answer":"The drain-source voltage rating is 30 V, and the continuous drain current is 27 A. These define the safe operating area for the MOSFET."},{"question":"What is the gate charge of IRF8308MTRPBF?","answer":"The maximum total gate charge (Qg) is 42 nC at 4.5 V gate drive. This value is used to size the gate-driver output current for the target switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF8308MTRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF8308MTRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}