{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF8010STRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF8010STRLPBF","canonicalUrl":"https://icboms.com/infineon/IRF8010STRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF8010STRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET N-channel MOSFET, IRF8010STRLPBF, 100V Vdss, 80A Id, 15mOhm Rds(on) at 10V, D2PAK surface-mount package, -55°C to 175°C junction temperature.","salesMarkdown":"## 100 V, 80 A N-channel HEXFET in D2PAK It comes in a D2PAK (TO-263) surface-mount package, designed for high-current switching applications where board space is tight but thermal performance still matters — the large copper tab on the D2PAK pulls heat into the PCB plane. ## 15 mOhm Rds(on) — what it means for conduction loss The on-resistance is 15 mOhm maximum at 45 A drain current with 10 V gate drive. At 45 A, that works out to roughly 30 W conduction loss at the hot junction — the 260 W package dissipation rating (at case temperature) gives enough thermal headroom for a properly heatsunk design, but the junction temperature derating curve is the real limiter in continuous operation. ## Gate charge and switching drive Total gate charge is 120 nC at 10 V, with an input capacitance of 3830 pF at 25 V drain-source. For a 100 kHz switching frequency, the average gate drive current needed is about 12 mA — a standard MOSFET gate driver handles that comfortably. The ±20 V maximum gate-source rating gives margin for ringing on long gate traces in a motor-drive or power-supply layout. ## Temperature range and application fit Junction temperature range is -55°C to 175°C, covering military and industrial extremes. That makes it suitable for under-hood automotive, industrial motor drives, telecom rectifiers, and battery management systems where the ambient can push past 85°C and the MOSFET sees self-heating on top. The 4 V maximum gate threshold at 250 µA drain current means it needs a 10 V gate drive to hit the rated Rds(on) — a 5 V logic-level drive will leave it partially enhanced and running hot. ## Active production — no LTB concern It is ROHS3 compliant, and the D2PAK package is a standard surface-mount format that remains widely used in power designs.","metaTitle":"IRF8010STRLPBF HEXFET N-Channel MOSFET, 100V 80A D2PAK","metaDescription":"IRF8010STRLPBF N-channel MOSFET, 100V Vdss, 80A Id, 15mOhm Rds(on) at 10V. Active production. D2PAK surface mount.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"15mOhm @ 45A, 10V","Power Dissipation (Max)":"260W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"120 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"3830 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.7","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.70000","currency":"USD"},{"qty":10,"price":"$2.42900","currency":"USD"},{"qty":100,"price":"$1.95230","currency":"USD"},{"qty":800,"price":"$1.60398","currency":"USD"},{"qty":1600,"price":"$1.33665","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ef1253807c2ba3977738486ee5deaab4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF8010STRLPBF?","answer":"The maximum on-resistance is 15 mOhm at 45 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction loss calculations in your thermal design."},{"question":"What is the gate charge of IRF8010STRLPBF?","answer":"Total gate charge is 120 nC at 10 V gate-source voltage. This determines the gate drive current needed for your switching frequency — for example, at 100 kHz the average drive current is about 12 mA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF8010STRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF8010STRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}