{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7862TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7862TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7862TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7862TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRF7862TRPBF, N-Channel MOSFET, 30 V Vdss, 21 A continuous drain, 3.7 mOhm Rds(on) max at 20 A, 10 V, 45 nC gate charge, 8-SOIC package, -55°C to 150°C.","salesMarkdown":"## 3.7 mOhm Rds(on) — the conduction loss floor The IRF7862TRPBF: The headline spec is the 3.7 mOhm maximum on-resistance at Vgs=10 V and Id=20 A — this sets the conduction loss floor in a synchronous buck converter or load switch. At 20 A, the I²R loss is under 1.5 W, but the 8-SOIC package dissipates only 2.5 W max at 25 °C ambient, so the board copper and airflow must carry the thermal budget. ## Gate drive and switching — 45 nC at 4.5 V Gate charge is specified at 45 nC max with Vgs=4.5 V, meaning the MOSFET can be driven from a 5 V logic rail with moderate gate-driver current. The input capacitance Ciss is 4090 pF at Vds=15 V — the driver must supply the Qg total at the target switching frequency. For a 100 kHz buck, the average gate current is 45 nC × 100 kHz = 4.5 mA, well within a standard driver's capability. ## 30 V Vdss — voltage headroom check The 30 V drain-source rating gives 50 % headroom on a 12 V rail and 25 % on a 24 V rail. For 24 V systems with inductive loads or hot-plug transients, the margin is tight — a 36 V or 40 V rated part is safer if the bus sees spikes above 30 V. The gate-source maximum is ±20 V, so a Zener clamp on the gate is unnecessary for logic-level drive. ## Thermal and package — 2.5 W in an 8-SOIC The 8-SOIC (8-SO) surface-mount package limits power dissipation to 2.5 W at 25 °C ambient. At 21 A continuous drain, the on-resistance at 150 °C junction (the max operating temperature) rises to roughly 1.5× the 25 °C value — about 5.6 mOhm — pushing I²R loss to 2.5 W. The board layout must provide a low-thermal-resistance path through the copper pour and vias to keep the junction below 150 °C. ## Lifecycle and sourcing It is ROHS3 compliant.","metaTitle":"IRF7862TRPBF N-Channel MOSFET, 30 V, 21 A, 3.7 mOhm Rds(on)","metaDescription":"IRF7862TRPBF N-Channel HEXFET MOSFET, 30 V Vdss, 21 A continuous drain, 3.7 mOhm Rds(on) at 10 V. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.35V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.7mOhm @ 20A, 10V","Power Dissipation (Max)":"2.5W (Ta)","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"4090 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"21A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.18","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.18000","currency":"USD"},{"qty":10,"price":"$0.96900","currency":"USD"},{"qty":100,"price":"$0.75340","currency":"USD"},{"qty":500,"price":"$0.63858","currency":"USD"},{"qty":1000,"price":"$0.52019","currency":"USD"},{"qty":2000,"price":"$0.48970","currency":"USD"},{"qty":4000,"price":"$0.48970","currency":"USD"},{"qty":8000,"price":"$0.46638","currency":"USD"},{"qty":12000,"price":"$0.44485","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ac52f9370a9adb1c371fe92a2f1b9983.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the IRF7862TRPBF?","answer":"The maximum Rds(on) is 3.7 mOhm at Vgs=10 V and Id=20 A. This is the conduction loss spec for a synchronous rectifier or load switch."},{"question":"Can the IRF7862TRPBF be used for 24 V systems?","answer":"The 30 V Vdss rating provides 25 % headroom on a 24 V rail. For systems with inductive transients or hot-plug events, a 40 V rated part is recommended to avoid avalanche breakdown."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7862TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7862TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}