{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7665S2TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7665S2TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7665S2TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7665S2TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRF7665S2TRPBF, N-Channel MOSFET, 100 V, 4.1 A continuous, Rds(on) 62 mOhm at 10 V, DirectFET package, surface mount, -55°C to 175°C junction temperature.","salesMarkdown":"## 100 V N-channel in a DirectFET can — conduction loss and thermal path The on-resistance is specified at 62 mOhm maximum when driven with 10 V on the gate and 8.9 A drain current — this is the figure to use for conduction-loss budgeting in a synchronous rectifier or primary-side switch. At 4.1 A continuous, the I²R conduction loss at 62 mOhm is just over 1 W. The total device dissipation is rated at 2.4 W, so the junction-to-ambient thermal path in the DirectFET package must be managed — the copper area on the drain tab and airflow determine the real thermal limit. The gate threshold is 5 V maximum at 25 µA, so a 10 V gate drive provides ample overdrive for a hard-switched topology. ## Junction temperature range and package thermal reality This matters in a high-ambient enclosure or a motor-drive bay where the MOSFET sits near the heatsink baseplate. The DirectFET package (listed as Bulk in the spec — the part ships in tape-and-reel as the TR suffix indicates) exposes the drain on the top surface for direct heatsinking or PCB copper spreading. Infineon lists the IRF7665S2TRPBF as Active.","metaTitle":"IRF7665S2TRPBF N-Channel MOSFET, 100 V, 4.1 A, DirectFET","metaDescription":"Infineon IRF7665S2TRPBF N-channel MOSFET, 100 V, 4.1 A continuous, 62 mOhm Rds(on) at 10 V. DirectFET package, -55°C to 175°C junction range.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","power_w":"2.4","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0005","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"5 V @ 25µA","switching_current_a":"4.1","Rds On (Max) @ Id, Vgs":"62mOhm @ 8.9 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"13 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.43","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF7665S2TRPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of IRF7665S2TRPBF?","answer":"The maximum on-resistance is 62 mOhm at Vgs = 10 V and Id = 8.9 A."},{"question":"Is IRF7665S2TRPBF active or obsolete?","answer":"No discontinuation notice or last-time-buy date has been issued."},{"question":"What is the maximum drain current of IRF7665S2TRPBF?","answer":"The continuous drain current rating is 4.1 A at 100 V. The pulsed current capability is higher — the switching current is listed at 14.4 A."},{"question":"Does IRF7665S2TRPBF have a DirectFET package?","answer":"Yes, the description calls out the DirectFET package. The mounting type is surface mount, and the drain tab on top allows direct heatsinking."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7665S2TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7665S2TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}