{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7483MTRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7483MTRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7483MTRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7483MTRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon StrongIRFET™ IRF7483MTRPBF, N-Channel MOSFET, 40 V Vdss, 135 A continuous drain, 2.3 mΩ Rds(on) at 10 V, DirectFET™ Isometric MF package, -55°C to 150°C junction temperature.","salesMarkdown":"## What this N-channel StrongIRFET™ does on the board The Infineon IRF7483MTRPBF is an N-channel MOSFET from the StrongIRFET™ series, built for low-resistance switching in power conversion and motor-drive stages. The DirectFET™ Isometric MF package keeps the inductance low and lets the backside of the can sink heat directly to the board, which matters when the load current is high and the board space is tight. Gate charge is 81 nC at 10 V, so the driver needs to source and sink that charge each switching cycle — a typical 2 A gate-driver IC will turn the FET on in about 40 ns, but the switching loss scales with the rise and fall times, so the designer should check the gate-drive loop inductance against the Qg figure. The drive voltage range of 6 V to 10 V means the FET is fully enhanced at 10 V but still achieves a usefully low Rds(on) at 6 V, which helps in systems with a 5 V or 12 V gate-drive rail. ## Package and mounting — DirectFET Isometric MF The DirectFET™ Isometric MF package is a surface-mount can with a large backside drain contact that conducts heat into the PCB copper. The package is designed for reflow soldering; the datasheet recommends a solder paste stencil aperture that covers at least 70% of the backside pad area to keep the thermal resistance low. The part is MSL 1 out of the bag, so no bake is needed before reflow if the pouch seal is intact. The bulk shipping form means the parts come loose in a bag, not on a reel — the buyer should confirm pick-and-place compatibility if they are running a high-volume line.","metaTitle":"IRF7483MTRPBF N-Channel MOSFET, 40V, 135A, 2.3mΩ","metaDescription":"IRF7483MTRPBF N-Channel MOSFET, 40V Vdss, 135A continuous drain, 2.3mΩ Rds(on) at 10V. DirectFET Isometric MF package. Active lifecycle.","metaKeywords":null},"attributes":{"series":"StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"StrongIRFET™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"DirectFET™ Isometric MF","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"2.3mOhm @ 81A, 10V","Power Dissipation (Max)":"74W (Tc)","Supplier Device Package":"DirectFET™ Isometric MF","Gate Charge (Qg) (Max) @ Vgs":"81 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"3913 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"135A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.92","stockQuantity":0,"priceTiers":[{"qty":327,"price":"$0.92000","currency":"USD"}]},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/49rjqreheg/IRSD-S-A0001021909-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF7483MTRPBF at 10V?","answer":"The Rds(on) is 2.3 mΩ maximum at a drain current of 81 A and a gate-source voltage of 10 V."},{"question":"Is IRF7483MTRPBF RoHS compliant?","answer":"The part is listed with a RoHS compliance status; the suffix 'TRPBF' in the order code indicates lead-free and RoHS-compliant plating. Verify the specific date code against the latest Infineon RoHS declaration if your compliance audit requires it."},{"question":"What is the gate charge of IRF7483MTRPBF?","answer":"The maximum gate charge (Qg) at a gate-source voltage of 10 V is 81 nC."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7483MTRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7483MTRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}