{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7451TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7451TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7451TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7451TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF7451TRPBF, HEXFET® N-Channel MOSFET, 150 V Vdss, 3.6 A Id, 90 mOhm Rds(on) at 10 V, 41 nC gate charge, 8-SOIC package, -55°C to 150°C junction temperature.","salesMarkdown":"The IRF7451TRPBF is a 150 V, 3.6 A N-channel HEXFET® MOSFET in an 8-SOIC (0.154-inch body width) surface-mount package. It is designed for medium-voltage DC-DC converters, secondary-side synchronous rectification, and load switches in 48 V and 72 V bus systems where the drain-source voltage ceiling needs headroom above the nominal rail. ## Conduction and switching — the numbers that set the thermal budget At the full 3.6 A rating, I²R loss reaches about 1.17 W, which must fit inside the 2.5 W package power dissipation limit at 25°C ambient — derating above that temperature is required. Gate charge totals 41 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is 4.1 mA — within the capability of most dedicated MOSFET drivers, but worth checking against the driver's peak source/sink rating if the gate resistor is low. Input capacitance is 990 pF at 25 V drain-source. This capacitance, together with the gate charge, determines the switching energy per cycle; the 990 pF figure is moderate for a 150 V part and keeps the Miller plateau duration manageable in hard-switched topologies. ## Temperature range and package — what the 150°C junction buys you The 150°C Tj(max) also provides derating headroom for designs targeting 105°C ambient with a 20% margin on junction temperature. The 8-SOIC package (supplier device package 8-SO) has a 0.154-inch body width and 0.050-inch lead pitch. The copper pad area on the PCB under the die attach region directly influences thermal resistance — a 1-inch² copper pour on a 2-ounce board can drop RthJA significantly below the free-air value.","metaTitle":"IRF7451TRPBF HEXFET N-Ch MOSFET, 150 V, 3.6 A, 90 mOhm","metaDescription":"IRF7451TRPBF N-channel HEXFET MOSFET, 150 V drain-source, 3.6 A continuous, 90 mOhm Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.5V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"90mOhm @ 2.2A, 10V","Power Dissipation (Max)":"2.5W (Ta)","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"41 nC @ 10 V","Drain to Source Voltage (Vdss)":"150 V","Input Capacitance (Ciss) (Max) @ Vds":"990 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3.6A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.31000","currency":"USD"},{"qty":10,"price":"$1.06900","currency":"USD"},{"qty":100,"price":"$0.83140","currency":"USD"},{"qty":500,"price":"$0.70474","currency":"USD"},{"qty":1000,"price":"$0.57408","currency":"USD"},{"qty":2000,"price":"$0.54043","currency":"USD"},{"qty":4000,"price":"$0.54043","currency":"USD"},{"qty":8000,"price":"$0.51470","currency":"USD"},{"qty":12000,"price":"$0.49094","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5ea3d15c00f254960937d2f41655b507.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional second-source for IRF7451TRPBF?","answer":"The Infineon IPD50R950CEAUMA1 is a 500 V, 4.3 A CoolMOS™ CE device with a 950 mOhm Rds(on) and 10.5 nC gate charge. It is not a pin-compatible drop-in — the voltage class, on-resistance, and gate charge differ significantly — but it serves a similar load-switch role in higher-voltage bus systems."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7451TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7451TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}