{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7402TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7402TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7402TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7402TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, N-Channel MOSFET, 20 V Drain to Source Voltage, 6.8 A Continuous Drain Current at 25°C, 35 mOhm Rds On at 4.1 A and 4.5 V, 8-SOIC package, -55°C to 150°C operating temperature.","salesMarkdown":"The Infineon IRF7402TRPBF is a 20 V, 6.8 A N-channel MOSFET from the HEXFET series, built on a metal-oxide semiconductor process. Typical applications include low-voltage DC-DC converters, load switches, and battery management circuits where logic-level gate drive (2.7 V to 4.5 V) is available. The maximum Rds(on) is 35 mΩ at 4.1 A drain current with a 4.5 V gate-source voltage. The drive voltage range for achieving the specified on-resistance is 2.7 V (minimum) to 4.5 V (maximum). That 35 mΩ figure is the worst-case ceiling at 4.5 V drive; at 2.7 V the resistance will be higher, so designs relying on the lower gate threshold should budget additional conduction loss. The IRF7402TRPBF is marked obsolete per the manufacturer's product status. For BOM lines that still require this exact part, procurement must rely on independent distribution channels for remaining stock.","metaTitle":"IRF7402TRPBF Infineon N-Channel MOSFET, 20V, 6.8A, 35mΩ","metaDescription":"IRF7402TRPBF Infineon HEXFET N-Channel MOSFET, 20V Vdss, 6.8A Id, 35mΩ Rds(on) at 4.5V. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±12V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"700mV @ 250µA (Min)","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"35mOhm @ 4.1A, 4.5V","Power Dissipation (Max)":"2.5W (Ta)","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"20 V","Input Capacitance (Ciss) (Max) @ Vds":"650 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"2.7V, 4.5V","Current - Continuous Drain (Id) @ 25°C":"6.8A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.8500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0ad81d368bd58bac7354b461526499ca.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF7402TRPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for IRF7402TRPBF?","answer":"For a pin-compatible alternative, you would need to cross-reference the 8-SOIC footprint and 20 V / 6.8 A rating against current Infineon or equivalent N-channel MOSFETs. Our sourcing team can help identify a suitable substitute when you submit an RFQ."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7402TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7402TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T15:07:30.581Z","lastPublished":"2026-07-16T15:07:30.581Z","indexable":true}}