{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7389TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7389TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7389TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7389TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF7389TRPBF, N and P-Channel MOSFET, 30V Vdss, 29mOhm Rds(on) max at 5.8A, 10V, Logic Level Gate, 2.5W, Surface Mount 8-SOIC, -55 to 150°C.","salesMarkdown":"## Complementary pair in a single SOIC-8 The IRF7389TRPBF from Infineon's HEXFET series integrates both an N-channel and a P-channel MOSFET in one 8-SOIC package, saving board area in applications that need a complementary half-bridge or a load switch with level-shifted gate drive. At 29 mOhm max (N-channel) the conduction loss at 5 A is under 0.75 W, but the total gate charge of 33 nC at 10 V means the driver must supply about 33 nC per switching cycle — at 500 kHz that is 16.5 mA average gate drive current, well within a typical MOSFET driver's capability. Input capacitance Ciss is 650 pF at 25 V drain bias, which together with the gate charge defines the switching speed; the 8-SOIC package's 2.5 W power dissipation ceiling limits how fast you can switch at high duty cycles without exceeding the junction temperature rating.","metaTitle":"IRF7389TRPBF HEXFET N/P-Channel MOSFET, 30V, 29mOhm, 8-SOIC","metaDescription":"IRF7389TRPBF HEXFET N/P-Channel MOSFET, 30V drain-source, 29mOhm Rds(on) at 5.8A, logic-level gate, -55 to 150°C, 8-SOIC. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N and P-Channel","FET Feature":"Logic Level Gate","Power - Max":"2.5W","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"29mOhm @ 5.8A, 10V","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"33nC @ 10V","Drain to Source Voltage (Vdss)":"30V","Input Capacitance (Ciss) (Max) @ Vds":"650pF @ 25V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.18","priceTiers":[{"qty":1,"price":"$1.18000","currency":"USD"},{"qty":10,"price":"$1.05300","currency":"USD"},{"qty":100,"price":"$0.82130","currency":"USD"},{"qty":500,"price":"$0.67844","currency":"USD"},{"qty":1000,"price":"$0.53561","currency":"USD"},{"qty":2000,"price":"$0.49991","currency":"USD"},{"qty":4000,"price":"$0.49991","currency":"USD"},{"qty":8000,"price":"$0.47491","currency":"USD"},{"qty":12000,"price":"$0.46575","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/749c6169f245d25ca59ba538dd12229b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF7389TRPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) for IRF7389TRPBF?","answer":"The maximum on-resistance is 29 mOhm at 5.8 A drain current with 10 V gate drive, measured at 25 °C junction temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7389TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7389TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}