{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7343TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7343TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7343TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7343TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF7343TRPBF, HEXFET series, complementary N and P-Channel MOSFET, 55V drain-to-source voltage, 4.7A/3.4A continuous drain current, 50mOhm Rds(on) at 10V, SO-8 package, -55°C to 150°C operating temperature.","salesMarkdown":"## Complementary N/P-channel in one SO-8 The IRF7343TRPBF integrates an N-channel and a P-channel MOSFET in a single 8-SOIC package, rated for a drain-to-source voltage of 55 V. The N-channel side handles 4.7 A continuous drain current; the P-channel side is rated at 3.4 A. On-resistance is 50 mOhm maximum for the N-channel at Vgs = 10 V and 4.7 A. This dual configuration lets one device replace two separate MOSFETs in half-bridge topologies, synchronous rectifier stages, or bidirectional load switches — cutting component count and PCB area. ## Thermal budget in SO-8 Maximum power dissipation is 2 W in the SO-8 package. That 2 W ceiling sets the practical continuous current well below the 4.7 A / 3.4 A ratings unless the board provides generous copper area on the drain pads. For a 55 V rail, the Rds(on) at elevated junction temperature rises roughly 50 % above the 25 °C value — factor that into the thermal loop when sizing the load. ## Gate drive and switching Total gate charge is 36 nC at Vgs = 10 V, with an input capacitance of 740 pF at Vds = 25 V. A 10 V gate drive is needed to reach the rated Rds(on); the threshold voltage is 1 V maximum at 250 µA drain current. The gate charge is moderate — a standard 1 A gate driver can switch the pair at 100–200 kHz without excessive drive loss. ## Lifecycle and sourcing Product status is Active with ROHS3 compliance. No official second source or direct replacement is listed in the manufacturer's cross-reference; the SO-8 footprint is common, so a parametric search for a complementary N/P-channel MOSFET in the same package is straightforward if a dual-source qualification is needed.","metaTitle":"IRF7343TRPBF MOSFET N/P-CH 55V 4.7A/3.4A SO-8","metaDescription":"IRF7343TRPBF complementary N/P-channel HEXFET MOSFET, 55V Vdss, 4.7A/3.4A continuous drain, 50mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"MOSFET (Metal Oxide)","Power - Max":"2W","Configuration":"N and P-Channel","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"50mOhm @ 4.7A, 10V","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"36nC @ 10V","Drain to Source Voltage (Vdss)":"55V","Input Capacitance (Ciss) (Max) @ Vds":"740pF @ 25V","Current - Continuous Drain (Id) @ 25°C":"4.7A, 3.4A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.13","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.13000","currency":"USD"},{"qty":10,"price":"$0.92300","currency":"USD"},{"qty":100,"price":"$0.71770","currency":"USD"},{"qty":500,"price":"$0.60836","currency":"USD"},{"qty":1000,"price":"$0.49557","currency":"USD"},{"qty":2000,"price":"$0.46652","currency":"USD"},{"qty":4000,"price":"$0.46652","currency":"USD"},{"qty":8000,"price":"$0.44431","currency":"USD"},{"qty":12000,"price":"$0.42380","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/577c9afe489902308710b57ac2882546.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between IRF7343TRPBF and IRF7343PBF?","answer":"The IRF7343TRPBF is supplied in Tape & Reel packaging for automated assembly, while the IRF7343PBF is typically offered in tube or bulk. The electrical specifications — voltage, current, on-resistance, package — are identical between the two suffix variants."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7343TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7343TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}