{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7314TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7314TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7314TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7314TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF7314TRPBF, dual P-channel logic-level MOSFET, 20 V Vdss, 5.3 A continuous drain, 58 mOhm Rds(on) at 4.5 Vgs, SOIC-8 package, -55 to 150 °C.","salesMarkdown":"## Gate charge and switching — what 29 nC buys you The IRF7314TRPBF: Total gate charge at 4.5 V is 29 nC max. The 780 pF input capacitance at 15 V Vds gives a rough idea of the switching loss at higher frequencies; keep the gate drive impedance low to avoid slow turn-off in a hard-switched load. ## Thermal budget in the SOIC-8 The 2 W package power limit is the real constraint, not the 5.3 A drain rating. The -55 to 150 °C operating range covers automotive under-hood and industrial environments.","metaTitle":"IRF7314TRPBF HEXFET Dual P-Ch MOSFET, 20V 5.3A SOIC-8","metaDescription":"IRF7314TRPBF dual P-channel logic-level MOSFET, 58 mOhm Rds(on) at 4.5 Vgs, 5.3 A continuous drain, SOIC-8. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"2 P-Channel (Dual)","FET Feature":"Logic Level Gate","Power - Max":"2W","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"700mV @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"58mOhm @ 2.9A, 4.5V","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"29nC @ 4.5V","Drain to Source Voltage (Vdss)":"20V","Input Capacitance (Ciss) (Max) @ Vds":"780pF @ 15V","Current - Continuous Drain (Id) @ 25°C":"5.3A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.98","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.98000","currency":"USD"},{"qty":10,"price":"$0.87800","currency":"USD"},{"qty":100,"price":"$0.68430","currency":"USD"},{"qty":500,"price":"$0.56526","currency":"USD"},{"qty":1000,"price":"$0.44626","currency":"USD"},{"qty":2000,"price":"$0.41651","currency":"USD"},{"qty":4000,"price":"$0.41651","currency":"USD"},{"qty":8000,"price":"$0.39568","currency":"USD"},{"qty":12000,"price":"$0.38805","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/958f039a5c2effeac66e8231f4175109.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF7314TRPBF?","answer":"The maximum on-resistance is 58 mOhm at 2.9 A drain current with a 4.5 V gate drive. At lower gate voltages the Rds(on) rises; the logic-level threshold (700 mV max at 250 µA) ensures a 3.3 V logic signal still turns the channel on hard."},{"question":"What is the gate charge of IRF7314TRPBF?","answer":"This is a moderate figure for a dual P-channel in an SOIC-8 — a 100 kHz PWM gate driver needs about 2.9 mA average per channel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7314TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7314TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}