{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF7313TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF7313TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF7313TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF7313TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF7313TRPBF, HEXFET series, dual N-channel MOSFET, 30V Vdss, 6.5A Id, 29mOhm Rds(on) max at 10V, 33nC Qg, 650pF Ciss, SO-8 package, -55 to 150°C TJ.","salesMarkdown":"The 29 mOhm max on-resistance at 5.8 A, 10 V sets the conduction loss floor for a given load — at 5 A the dissipation is about 0.73 W per channel, so the 2 W package power limit means both channels cannot run at full current simultaneously in a typical ambient; derating is required. Gate charge totals 33 nC at 10 V, and input capacitance is 650 pF at 25 V Vds. For a 100 kHz switching frequency, the gate-drive current needed is about 3.3 mA per channel — well within a standard gate driver's capability, but the SO-8 thermal path means the PCB copper area under the part is the real heatsink. IRF7313TRPBF carries an Active product status. ROHS3 compliant. ## Thermal and package — the SO-8 reality The junction temperature range is -55°C to 150°C, covering industrial and some automotive under-hood environments. The SO-8 package (3.90 mm wide body) has no exposed pad — the die is attached to the leadframe, and heat flows primarily through the drain leads and the PCB copper. For continuous operation above 3 A per channel, a 2-oz copper pour on the board is advisable.","metaTitle":"IRF7313TRPBF HEXFET Dual N-Ch MOSFET, 30V, 6.5A, 29mOhm","metaDescription":"IRF7313TRPBF HEXFET dual N-channel MOSFET, 30V Vdss, 6.5A Id, 29mOhm Rds(on) max at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"2 N-Channel (Dual)","FET Feature":"Standard","Power - Max":"2W","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"29mOhm @ 5.8A, 10V","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"33nC @ 10V","Drain to Source Voltage (Vdss)":"30V","Input Capacitance (Ciss) (Max) @ Vds":"650pF @ 25V","Current - Continuous Drain (Id) @ 25°C":"6.5A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.03","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.03000","currency":"USD"},{"qty":10,"price":"$0.90500","currency":"USD"},{"qty":100,"price":"$0.69380","currency":"USD"},{"qty":500,"price":"$0.54846","currency":"USD"},{"qty":1000,"price":"$0.43877","currency":"USD"},{"qty":2000,"price":"$0.39763","currency":"USD"},{"qty":4000,"price":"$0.38736","currency":"USD"},{"qty":8000,"price":"$0.36065","currency":"USD"},{"qty":12000,"price":"$0.34845","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/72fcfbb645372905f4ceb4a057d58417.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) value for IRF7313TRPBF?","answer":"Maximum on-resistance is 29 mOhm at 5.8 A drain current with 10 V gate drive. This is the conduction loss figure to use for worst-case thermal design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF7313TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF7313TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}