{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6892STRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6892STRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6892STRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6892STRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRF6892STRPBF, N-Channel HEXFET MOSFET, 25 V drain-source, 28 A switching current, 1.7 mOhm max Rds(on) at 10 V, 25 nC gate charge at 4.5 V, DIRECTFET-LV package, -40°C to 150°C junction temperature.","salesMarkdown":"## 1.7 mOhm Rds(on) at 10 V — conduction loss floor The IRF6892STRPBF is an N-channel HEXFET power MOSFET from Infineon in the DIRECTFET-LV package, rated for 25 V drain-source and 28 A switching current. ## Gate charge and threshold — driver compatibility Gate charge is 25 nC max at 4.5 V, which means a 5 V logic-level gate driver with 2 A peak source can switch this FET in under 15 ns. The 2.1 V max threshold at 50 µA confirms logic-level turn-on, but the designer must ensure the driver's Voh stays above 4.5 V to achieve the specified Rds(on); at 3.3 V gate drive the on-resistance will rise above the 1.7 mOhm figure. The ±16 V Vgs absolute maximum gives headroom for gate-drive overshoot in hard-switching topologies, though the recommended drive is 4.5 V to 10 V for lowest conduction loss. ## Junction temperature and package — where it fits The DIRECTFET-LV package is a low-profile, can-style surface-mount case that requires a specific solder stencil aperture for the large drain pad — the datasheet landing pattern is non-negotiable for achieving the rated thermal resistance.","metaTitle":"IRF6892STRPBF N-Channel MOSFET, 25V, 1.7mOhm, DIRECTFET-LV","metaDescription":"IRF6892STRPBF N-Channel HEXFET MOSFET, 25V, 28A switching, 1.7mOhm Rds(on) at 10V, 25nC Qg at 4.5V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±16 V","series":"HEXFET®","power_w":"2.1","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0025","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"25.0","Vgs(Th) (Max) @ Id":"2.1 V @ 50µA","switching_current_a":"28.0","Rds On (Max) @ Id, Vgs":"1.7mOhm @ 28 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"25 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.71","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/6da9d43b94d51d0a9d3b9b9a19d6d952.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) and gate charge of the IRF6892STRPBF?","answer":"Maximum gate charge is 25 nC at 4.5 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6892STRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6892STRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}