{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6775MTRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6775MTRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6775MTRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6775MTRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF6775MTRPBF, N-Channel MOSFET, 150 V Vdss, 4.9 A continuous drain, 56 mOhm Rds(on) at 10 V, DirectFET Isometric MZ package, -40 to 150 °C junction temperature.","salesMarkdown":"## 150 V, 4.9 A N-channel in a DirectFET can It is built on the HEXFET trench technology and comes in the DirectFET Isometric MZ package — a can-style, solderable-top-side package that pulls heat through the board and the top-side heatsink pad simultaneously. ## 56 mOhm on-resistance — the conduction loss number Maximum Rds(on) is 56 mOhm at Vgs = 10 V and Id = 5.6 A. This is the figure to use for worst-case conduction loss in a 48 V or 72 V bus converter, a secondary-side synchronous rectifier, or a load switch in a 120 V intermediate bus. The 10 V drive voltage is typical for a standard gate driver IC; the part also specifies a threshold voltage of 5 V max at 100 µA, so a 10 V gate drive ensures the FET is fully enhanced with margin. Gate charge is 36 nC max at Vgs = 10 V. This is a moderate figure — it allows switching in the 100–200 kHz range with a standard driver without excessive gate-drive losses. Input capacitance Ciss is 1411 pF at Vds = 25 V, which sets the driver's peak current requirement during the Miller plateau. ## DirectFET package — rework and thermal reality The DirectFET Isometric MZ is a leadless, can-style package with a large solderable pad on the bottom and a flat metal top. The bottom pad is the drain connection; the source and gate are on the same bottom face as small pads. This package needs a well-designed PCB footprint with thermal vias under the drain pad to pull heat to inner copper planes. The top-side metal can also be heatsunk — a thermal pad or small heatsink on the can drops junction-to-ambient thermal resistance significantly. Reworking a DirectFET is different from a standard SO-8 or DPAK. The large bottom pad wicks solder quickly; a hot-air station with a focused nozzle and a preheat plate is the safe approach. The top-side can is a good visual indicator of the reflow — when the solder under the pad collapses, the can settles flush against the board. No pins to bend, but the pad alignment must be precise; the part self-centers only slightly during reflow. Moisture sensitivity level should be confirmed from the latest Infineon packing label before bake. It is ROHS3 compliant.","metaTitle":"IRF6775MTRPBF HEXFET N-Ch 150V 4.9A DirectFET MOSFET","metaDescription":"IRF6775MTRPBF HEXFET N-channel MOSFET, 150V Vdss, 4.9A Id, 56mOhm Rds(on) at 10V. DirectFET Isometric MZ package. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"DirectFET™ Isometric MZ","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"56mOhm @ 5.6A, 10V","Power Dissipation (Max)":"2.8W (Ta), 89W (Tc)","Supplier Device Package":"DIRECTFET™ MZ","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 10 V","Drain to Source Voltage (Vdss)":"150 V","Input Capacitance (Ciss) (Max) @ Vds":"1411 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.9A (Ta), 28A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.49000","currency":"USD"},{"qty":10,"price":"$2.06800","currency":"USD"},{"qty":100,"price":"$1.64610","currency":"USD"},{"qty":500,"price":"$1.39286","currency":"USD"},{"qty":1000,"price":"$1.18182","currency":"USD"},{"qty":2000,"price":"$1.12273","currency":"USD"},{"qty":4800,"price":"$1.08052","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b2a7c20b0edc060460413230b664610e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF6775MTRPBF?","answer":"This is the worst-case on-resistance for conduction loss calculations at a 10 V gate drive."},{"question":"Is IRF6775MTRPBF RoHS compliant?","answer":"Yes, the IRF6775MTRPBF is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6775MTRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6775MTRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}