{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6722MTRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6722MTRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6722MTRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6722MTRPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF6722MTRPBF, Infineon HEXFET® N-Channel MOSFET, 30 V Vds, 13 A continuous / 56 A pulsed, 7.7 mOhm Rds(on) at 10 V, 17 nC Qg at 4.5 V, DIRECTFET package, surface mount, -40°C to 150°C Tj.","salesMarkdown":"## What this MOSFET is and where it fits The Infineon IRF6722MTRPBF is an N-channel enhancement-mode power MOSFET from the HEXFET family, built for low-voltage (<30 V) switching and load-management roles. It carries a continuous drain current of 13 A and a pulsed rating of 56 A, with a maximum on-resistance of 7.7 mOhm at a 10 V gate drive. The DIRECTFET package keeps the footprint small and the thermal path short — useful for dense power stages, point-of-load converters, and battery-protection circuits where board space is tight and junction temperatures can hit 150°C. ## Key ratings and what they mean for the BOM The 7.7 mOhm Rds(on) at 10 V gate drive drives conduction loss. At 13 A, dissipation is within the 2.3 W package limit. The 17 nC gate charge at 4.5 V allows fast switching.","metaTitle":"IRF6722MTRPBF N-Channel MOSFET, 30V 13A/56A, 7.7mOhm","metaDescription":"IRF6722MTRPBF N-Channel HEXFET MOSFET, 30V, 13A continuous / 56A pulsed, 7.7mOhm Rds(on) at 10V. Active production. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"2.3","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0013","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.4 V @ 50µA","switching_current_a":"13.0","Rds On (Max) @ Id, Vgs":"7.7mOhm @ 13 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.83","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/552afaba5dc178a8a97556aab9e028e7.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF6722MTRPBF?","answer":"The maximum on-resistance is 7.7 mOhm at a drain current of 13 A with a 10 V gate drive."},{"question":"Is IRF6722MTRPBF RoHS compliant?","answer":"The part is listed as RoHS compliant; the 'TRPBF' suffix in the order code indicates lead-free and RoHS-compatible plating."},{"question":"What package does IRF6722MTRPBF use?","answer":"It comes in the DIRECTFET package, a surface-mount, leadless package designed for low inductance and good thermal performance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6722MTRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6722MTRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}