{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6714MTRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6714MTRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6714MTRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6714MTRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRF6714MTRPBF, N-Channel MOSFET, 25 V Vds, 2.1 mOhm Rds(on) max at 29 A, 10 V Vgs, 44 nC Qg at 4.5 V, -40°C to 150°C Tj, DirectFET package.","salesMarkdown":"## 25 V N-channel FET with 2.1 mOhm Rds(on) — conduction loss floor That Rds(on) figure, specified at the full rated current, sets the conduction loss for a synchronous rectifier or a low-side switch in a 12 V or 24 V rail — at 29 A the I²R loss is under 1.8 W, which the 2.8 W package power rating can handle with adequate board copper. ## Gate charge and switching speed — sizing the driver Total gate charge is 44 nC at 4.5 V Vgs, meaning a driver sourcing 1 A can turn the FET on in about 44 ns. The ±20 V maximum gate rating gives headroom for gate-drive overshoot in a hard-switching topology — a 12 V gate drive rail is well inside the safe window. The 0.0039 µF input capacitance (Ciss) is consistent with a die sized for 166 A pulsed drain current. ## Temperature range and operating environment The 2.4 V maximum gate threshold at 100 µA ensures the device turns on cleanly with a 3.3 V logic-level gate drive, though the 2.1 mOhm Rds(on) is specified at 10 V Vgs for lowest resistance. ## Sourcing and lifecycle posture Listed with an active lifecycle status. The part is a current-production Infineon DirectFET MOSFET, sourced through independent distribution.","metaTitle":"IRF6714MTRPBF N-Channel HEXFET MOSFET, 25 V","metaDescription":"Infineon IRF6714MTRPBF N-channel HEXFET MOSFET, 25 V drain-source, 2.1 mOhm max Rds(on) at 29 A, 10 V gate drive.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"2.8","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0039","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"25.0","Vgs(Th) (Max) @ Id":"2.4 V @ 100µA","switching_current_a":"29.0","Rds On (Max) @ Id, Vgs":"2.1mOhm @ 29 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"44 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.93","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/430725714fb6846a0de8fa4e0e9ccc45.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can I use IRF6714MTRPBF in a motor driver?","answer":"Yes. The 25 V drain-source rating and 2.1 mOhm Rds(on) at 10 V gate drive suit a low-side or H-bridge switch in a 12 V or 24 V brushed DC or stepper motor driver. The 44 nC gate charge at 4.5 V means a standard gate-driver IC can switch it at tens of kHz without excessive drive current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6714MTRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6714MTRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}