{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6713STRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6713STRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6713STRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6713STRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRF6713STRPBF N-Channel MOSFET, DirectFET series, 25 V drain-source, 22 A / 95 A switching current, 3 mOhm Rds(on) at 10 V, ±20 V gate drive, surface mount.","salesMarkdown":"## DirectFET N-channel for low-voltage high-current switching The IRF6713STRPBF is an N-channel MOSFET from Infineon's DirectFET series, rated for 25 V drain-source and a continuous drain current of 22 A (95 A pulsed) in a surface-mount can-style package. That means the BOM line is safe for new designs and production ramp without sourcing risk from a looming EOL. ## Low gate-charge profile for fast switching Total gate charge is 32 nC at 4.5 V gate drive. At a 500 kHz switching frequency the gate driver delivers about 16 mA average — well within the capability of a standard half-bridge driver IC. The ±20 V maximum gate-source rating gives headroom for driving the FET from a 12 V regulated rail without worrying about oxide breakdown during transients. ## Thermal and package reality for the layout The DirectFET package is a copper can with the drain on the top-side tab — the PCB copper area under the can sets the junction-to-ambient thermal resistance. The datasheet lists 2.2 W power dissipation, but that figure assumes a standard footprint. For a 25 V, 22 A load switch or synchronous rectifier stage, the layout engineer should allocate a flooded copper region on the top layer under the can and vias to an inner-plane copper pour to keep Tj below the 150 °C maximum junction temperature.","metaTitle":"IRF6713STRPBF N-Channel MOSFET, 25V, 3mOhm, DirectFET","metaDescription":"IRF6713STRPBF N-Channel MOSFET, 25V, 22A/95A, 3mOhm Rds(on) at 4.5V, DirectFET package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"DirectFET™","power_w":"2.2","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0029","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"25.0","Vgs(Th) (Max) @ Id":"2.4 V @ 50µA","switching_current_a":"22.0","Rds On (Max) @ Id, Vgs":"3mOhm @ 22 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.00","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/93d6ff006387f31b5ac6303cfee5ec3a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF6713STRPBF at 4.5 V gate drive?","answer":"The maximum Rds(on) is 3 mOhm at 4.5 V gate drive with 22 A drain current. This is the same value specified at 10 V, meaning the FET saturates fully at logic-level gate voltages."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6713STRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6713STRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}