{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6674TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6674TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6674TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6674TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRF6674TRPBF, N-Channel MOSFET, 60V Vdss, 13.4A Id, 11mOhm Rds(on) @ 10V, DirectFET™ Isometric MZ package, -40°C to 150°C.","salesMarkdown":"## 60 V, 11 mOhm N-channel in a DirectFET package The DirectFET Isometric MZ package is a low-profile, solderable-drain can that conducts heat directly to the PCB pad — the thermal resistance to case is 1.4°C/W (89 W max dissipation at case), which keeps the junction cool in a tight layout. ## Gate charge and switching profile Total gate charge is 36 nC at 10 V gate drive, with an input capacitance of 1350 pF at 25 V drain-source. This Qg number tells you the driver current needed to hit a target switching frequency — for a 100 kHz hard-switched converter, the average gate drive current is about 3.6 mA, easily handled by a standard MOSFET driver. The gate threshold voltage maximum is 4.9 V at 100 µA drain current, so a 5 V logic gate drive will barely turn it on; a 10 V rail is the intended drive voltage for minimum Rds(on). ## Temperature range and thermal limits Power dissipation is 3.6 W in still air at 25°C ambient, rising to 89 W when the case is held at 25°C — in practice, the board copper area and airflow set the real limit. ## Lifecycle and sourcing posture ROHS3 compliant.","metaTitle":"IRF6674TRPBF HEXFET N-Ch 60V 13.4A MOSFET, 11mOhm Rds(on)","metaDescription":"IRF6674TRPBF N-channel 60V 13.4A DirectFET MOSFET from Infineon HEXFET series. 11mOhm Rds(on) at 10V, 36nC Qg. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"DirectFET™ Isometric MZ","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.9V @ 100µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"11mOhm @ 13.4A, 10V","Power Dissipation (Max)":"3.6W (Ta), 89W (Tc)","Supplier Device Package":"DIRECTFET™ MZ","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1350 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13.4A (Ta), 67A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.57","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.57000","currency":"USD"},{"qty":10,"price":"$3.21000","currency":"USD"},{"qty":100,"price":"$2.62980","currency":"USD"},{"qty":500,"price":"$2.23868","currency":"USD"},{"qty":1000,"price":"$1.88805","currency":"USD"},{"qty":2000,"price":"$1.79365","currency":"USD"},{"qty":4800,"price":"$1.75905","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4e5db409c8998ea45d0ce1b0189ac88a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What are the exact specifications of IRF6674TRPBF (Rds on, Vgs, Qg)?","answer":"Drain-source voltage rating is 60 V, continuous drain current is 13.4 A at 25°C ambient."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6674TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6674TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}