{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6665TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6665TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6665TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6665TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF6665TRPBF, N-Channel power MOSFET, 100 V drain-source, 4.2 A switching current, 62 mΩ Rds(on) at 10 V, 13 nC gate charge, surface mount, -40°C to 150°C junction temperature.","salesMarkdown":"## 100 V N-Channel switch for mid-power rails The Infineon IRF6665TRPBF is a 100 V N-Channel HEXFET power MOSFET rated for 4.2 A switching current, with a maximum on-resistance of 62 mΩ at Vgs = 10 V and Id = 5 A. At 62 mΩ max, the conduction loss at 4.2 A is within the 2.2 W package dissipation limit. The 13 nC gate charge keeps switching transitions fast. At 150°C junction, the Rds(on) roughly doubles from the 25°C value — factor that into the thermal budget if the ambient is above 85°C.","metaTitle":"IRF6665TRPBF N-Channel MOSFET, 100 V, 4.2 A, HEXFET","metaDescription":"IRF6665TRPBF N-Channel HEXFET MOSFET, 100 V, 4.2 A, 62 mΩ at 10 V, 13 nC gate charge, -40°C to 150°C junction. Active production, surface mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"2.2","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0005","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"5 V @ 250µA","switching_current_a":"4.2","Rds On (Max) @ Id, Vgs":"62mOhm @ 5 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"13 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.52","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fff404e65a0e11e2bbc154213c6ecd6f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Vgs rating of IRF6665TRPBF?","answer":"The maximum gate-source voltage is ±20 V. This is a standard 10 V logic-level gate drive threshold — the Rds(on) is specified at Vgs = 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6665TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6665TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}