{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6646TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6646TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6646TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6646TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF6646TRPBF, N-Channel MOSFET, 80 V Vdss, 12 A continuous drain, 9.5 mOhm Rds(on) at 10 V, DirectFET Isometric MN package, -40 to 150 °C.","salesMarkdown":"## 80 V, 12 A N-channel — DirectFET package, 9.5 mOhm Rds(on) The IRF6646TRPBF is an 80 V, 12 A N-channel MOSFET from Infineon's HEXFET series, housed in the DirectFET Isometric MN package. ## Gate charge and switching loss budget Total gate charge at 10 V is 50 nC, with an input capacitance of 2060 pF at 25 V drain-source. ## Thermal budget in the DirectFET can The DirectFET Isometric MN package is a can-shaped surface-mount format with a solderable top-side drain contact. Power dissipation is rated 2.8 W at 25 °C ambient and 89 W at the case — the wide spread reflects the package's ability to sink heat through the top-side drain pad to a heatsink or PCB copper plane. ## Active production, sourced per BOM line It is ROHS3 compliant.","metaTitle":"IRF6646TRPBF N-Channel MOSFET, 80V, 12A, DirectFET MN","metaDescription":"IRF6646TRPBF HEXFET N-channel MOSFET, 80V Vdss, 12A continuous drain, 9.5mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"DirectFET™ Isometric MN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.9V @ 150µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"9.5mOhm @ 12A, 10V","Power Dissipation (Max)":"2.8W (Ta), 89W (Tc)","Supplier Device Package":"DIRECTFET™ MN","Gate Charge (Qg) (Max) @ Vgs":"50 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"2060 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Ta), 68A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.85","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.39000","currency":"USD"},{"qty":10,"price":"$3.04700","currency":"USD"},{"qty":100,"price":"$2.44920","currency":"USD"},{"qty":500,"price":"$2.01222","currency":"USD"},{"qty":1000,"price":"$1.67685","currency":"USD"},{"qty":4800,"price":"$1.43730","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/75fad16670b24737fbff110185fe974e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What package does the IRF6646TRPBF come in?","answer":"It is supplied in the DirectFET Isometric MN package, a surface-mount can format with a solderable top-side drain contact."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6646TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6646TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}