{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6645TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6645TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6645TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6645TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRF6645TRPBF N-Channel MOSFET, 100 V drain-source, 35 mOhm Rds(on) at 10 V gate drive, 5.7 A continuous drain at Ta, DirectFET™ Isometric SJ surface mount package, -40°C to 150°C junction temperature.","salesMarkdown":"## 100 V N-channel in a DirectFET can — the thermal path is the story The IRF6645TRPBF is an Infineon HEXFET N-channel MOSFET rated for 100 V drain-source with a maximum Rds(on) of 35 mOhm at 5.7 A drain current and 10 V gate drive. The 20 nC typical gate charge at 10 V means a standard gate driver IC can switch it into the low hundreds of kHz without excessive drive current. The DirectFET Isometric SJ package is a metal-can SMT package with a solderable top-side drain contact — the drain tab is the top of the can, not a bottom pad. This changes the thermal path: heat conducts up through the can into a heatsink or board copper, rather than down through a traditional exposed pad. The PCB layout needs a thermal land on the top layer under the can, and the reflow profile must accommodate the can's mass. ## Rds(on) and current rating — the package derating trap The continuous drain current is rated at 5.7 A at 25 °C ambient (Ta) but 25 A at 25 °C case temperature (Tc). That 4.4× spread tells you the die can carry 25 A if the case is held at 25 °C — but in still air at room temperature, the package self-heating limits you to 5.7 A. The 2.2 W maximum power dissipation at Ta versus 42 W at Tc confirms that the board copper area and any airflow or heatsink directly determine the usable current. The 890 pF input capacitance at 25 V drain-source is moderate, so the gate drive doesn't need a high peak current for the switching edges. Combined with the 20 nC gate charge, this part suits hard-switched topologies like buck converters, forward converters, and asynchronous boost stages up to a few hundred kHz.","metaTitle":"IRF6645TRPBF N-Channel MOSFET, 100V, 35mOhm, DirectFET","metaDescription":"IRF6645TRPBF HEXFET N-channel MOSFET, 100V drain-source, 35mOhm Rds(on) at 10V gate drive, 5.7A continuous drain. DirectFET Isometric SJ package.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"DirectFET™ Isometric SJ","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.9V @ 50µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"35mOhm @ 5.7A, 10V","Power Dissipation (Max)":"2.2W (Ta), 42W (Tc)","Supplier Device Package":"DIRECTFET™ SJ","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"890 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5.7A (Ta), 25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.75","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.75000","currency":"USD"},{"qty":10,"price":"$1.45700","currency":"USD"},{"qty":100,"price":"$1.15940","currency":"USD"},{"qty":500,"price":"$0.98106","currency":"USD"},{"qty":1000,"price":"$0.83242","currency":"USD"},{"qty":2000,"price":"$0.79080","currency":"USD"},{"qty":4800,"price":"$0.76107","currency":"USD"},{"qty":9600,"price":"$0.73588","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/658a644321540cfc6093cc831e238e62.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF6645TRPBF?","answer":"The maximum on-resistance is 35 mOhm at 5.7 A drain current with 10 V gate-source drive."},{"question":"What is the gate charge of IRF6645TRPBF?","answer":"The maximum total gate charge is 20 nC at 10 V gate-source voltage."},{"question":"Is IRF6645TRPBF RoHS compliant?","answer":"Yes, the part is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6645TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6645TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}