{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6644TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6644TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6644TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6644TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRF6644TRPBF, N-Channel MOSFET, 100 V Vdss, 13 mOhm Rds(on) max at 10 V, 10.3 A continuous drain (Ta), DirectFET Isometric MN surface-mount package, -40°C to 150°C junction temperature.","salesMarkdown":"## 100 V N-channel in a DirectFET can The IRF6644TRPBF: The 13 mOhm max Rds(on) at 10 V gate drive sets the conduction loss floor — at 10.3 A the dissipation is under 1.4 W, which the DirectFET Isometric MN package can sink to the board without a separate heatsink in many layouts. ## Gate charge and switching budget Total gate charge Qg is 47 nC at 10 V. Driving this at 100 kHz requires an average gate current of about 4.7 mA from the driver — well within the capability of a standard gate-drive IC. The 2210 pF input capacitance at 25 V drain-source gives a rough Ciss figure for estimating switching losses in a hard-switched converter. ## Active production, ROHS3 compliant ROHS3 compliant.","metaTitle":"IRF6644TRPBF N-Channel MOSFET, 100 V, 13 mOhm, DirectFET MN","metaDescription":"IRF6644TRPBF N-channel HEXFET MOSFET, 100 V Vdss, 13 mOhm Rds(on) at 10 V, 10.3 A continuous. DirectFET Isometric MN package.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"DirectFET™ Isometric MN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.8V @ 150µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"13mOhm @ 10.3A, 10V","Power Dissipation (Max)":"2.8W (Ta), 89W (Tc)","Supplier Device Package":"DIRECTFET™ MN","Gate Charge (Qg) (Max) @ Vgs":"47 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"2210 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10.3A (Ta), 60A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.45000","currency":"USD"},{"qty":10,"price":"$3.09800","currency":"USD"},{"qty":100,"price":"$2.48980","currency":"USD"},{"qty":500,"price":"$2.04560","currency":"USD"},{"qty":1000,"price":"$1.70468","currency":"USD"},{"qty":4800,"price":"$1.46115","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ba5a1834ab712ad4db3e320eb187f1cf.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can IRF6644TRPBF be used for 24V systems?","answer":"Yes, the 100 V drain-source rating provides ample headroom for 24 V bus rails — the derating margin is over 4×, which keeps the device well within its safe operating area even under transient overvoltage conditions."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6644TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6644TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}