{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6641TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6641TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6641TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6641TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRF6641TRPBF HEXFET N-Channel MOSFET, 200 V, 4.6 A, 59.9 mOhm Rds(on) @ 10 V, 48 nC gate charge, surface mount, -40 to 150 °C Tj.","salesMarkdown":"## 200 V N-channel MOSFET for switched-mode and linear applications The Infineon IRF6641TRPBF is a 200 V N-channel HEXFET power MOSFET rated for 4.6 A continuous drain current and a maximum Rds(on) of 59.9 mOhm at 10 V gate drive. The surface-mount package fits standard reflow assembly, and the 150 °C junction temperature rating gives headroom in hot environments such as enclosed power supplies or industrial control cabinets. At 5.5 A drain current and 10 V gate drive, the maximum on-resistance is 59.9 mOhm. Conduction loss at 5.5 A is within the 2.8 W package power dissipation rating with adequate PCB copper and airflow. There is no last-time-buy window, no end-of-life notice to track. ## Mounting and thermal notes Surface-mount package — no through-hole leads. For continuous operation near 4.6 A, plan for adequate copper on the drain connection to keep junction temperature below 150 °C.","metaTitle":"IRF6641TRPBF N-Channel MOSFET, 200 V, 4.6 A, 59.9 mOhm","metaDescription":"IRF6641TRPBF HEXFET N-Channel MOSFET, 200 V, 4.6 A, 59.9 mOhm Rds(on) at 10 V. Active lifecycle. Surface mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","has_mpn":"IRF6641","power_w":"2.8","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0023","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"200.0","Vgs(Th) (Max) @ Id":"4.9 V @ 150µA","switching_current_a":"4.6","Rds On (Max) @ Id, Vgs":"59.9mOhm @ 5.5 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"48 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.85","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/71cd2e5d4420f0dc34057ef76550a57a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF6641TRPBF?","answer":"The maximum Rds(on) is 59.9 mOhm at 5.5 A drain current with a 10 V gate drive."},{"question":"Does IRF6641TRPBF have a surface mount package?","answer":"Yes, the mounting type is Surface Mount, suitable for standard SMT reflow assembly."},{"question":"What is the equivalent of IRF6641TRPBF?","answer":"Pin-compatible alternatives exist within the same 200 V N-channel HEXFET family; verify Rds(on) and gate charge against your load current and switching frequency to select the right variant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6641TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6641TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}