{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6637TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6637TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6637TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6637TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® N-Channel MOSFET, IRF6637TRPBF, 30 V drain-source, 14 A continuous / 59 A pulsed, 7.7 mOhm Rds(on) at 10 V, DirectFET surface-mount package.","salesMarkdown":"## Device identity and headline ratings The IRF6637TRPBF: The pulsed drain current ceiling is 59 A, which governs the safe operating area for switching transients and inrush events. ## On-resistance and conduction loss Maximum on-resistance is 7.7 mOhm at Vgs = 10 V and Id = 14 A. This is the figure to use for steady-state conduction loss calculations at the rated continuous current. The Rds(on) increases with junction temperature per the normalized curve in the datasheet; at 150 °C junction the resistance roughly doubles, so the I²R loss budget must include the hot resistance, not the 25 °C value. ## Gate drive and switching performance Total gate charge Qg is 17 nC max at Vgs = 4.5 V. This is the charge the gate driver must source to turn the FET fully on. At a 500 kHz switching frequency, the average gate-drive current is 8.5 mA; at 1 MHz it reaches 17 mA. The gate threshold voltage is 2.35 V max at Id = 250 µA, so a 5 V logic-level drive provides adequate overdrive margin. The maximum gate-source voltage rating is ±20 V, which accommodates most standard gate-drive rails without external clamping. ## Thermal and package considerations The DirectFET package is a surface-mount can with a metal top that acts as the drain contact and primary thermal path.","metaTitle":"IRF6637TRPBF Infineon N-Channel MOSFET","metaDescription":"IRF6637TRPBF N-channel HEXFET MOSFET, 30V, 14A continuous / 59A pulsed, 7.7 mOhm Rds(on) at 10V. Active production, sourced to order. Request a quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"2.3","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0013","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.35 V @ 250µA","switching_current_a":"14.0","Rds On (Max) @ Id, Vgs":"7.7mOhm @ 14 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.83","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to IRF6637TRPBF?","answer":"The DirectFET package footprint is proprietary to the IRF6637TRPBF; a functional replacement would require a board layout change."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6637TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6637TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}