{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6618TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6618TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6618TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6618TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF6618TRPBF N-Channel power MOSFET, 30 V drain-source, 30 A switching current, 2.2 mOhm Rds(on) max at 10 V gate drive, DirectFET surface-mount package, -40°C to 150°C junction temperature.","salesMarkdown":"## DirectFET N-channel — 30 V, 2.2 mOhm, 65 nC gate charge The IRF6618TRPBF: Gate charge is 65 nC at 4.5 V. ## Junction temperature and thermal budget The DirectFET package is a surface-mount can with an exposed drain pad. ## Gate drive and threshold Gate threshold voltage is 2.35 V maximum at 250 µA drain current. The ±20 V Vgs rating allows 10 V gate drive. ## Lifecycle and compliance The part is RoHS-compliant and lead-free per the PbF suffix in the order code.","metaTitle":"IRF6618TRPBF N-Channel Power MOSFET, 2.2 mOhm Rds(on), 30 V","metaDescription":"IRF6618TRPBF N-Channel HEXFET power MOSFET, 30 V, 30 A, 2.2 mOhm Rds(on) at 10 V. Active production, surface-mount DirectFET.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"2.8","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0056","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.35 V @ 250µA","switching_current_a":"30.0","Rds On (Max) @ Id, Vgs":"2.2mOhm @ 30 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"65 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.15","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/16e89db668a00be08b9b27ec3ddea20f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF6618TRPBF at 10 V gate drive?","answer":"This is the rated value at 25°C junction temperature; expect the typical Rds(on) to be lower, but the max figure is the one to use for worst-case conduction loss calculations."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6618TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6618TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}