{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF6616TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF6616TRPBF","canonicalUrl":"https://icboms.com/infineon/IRF6616TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF6616TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF6616TRPBF, Infineon HEXFET N-channel MOSFET, 40 V, 19 A switching current, 5 mOhm Rds(on) at 10 V, 44 nC gate charge, surface mount, -40°C to 150°C junction temperature.","salesMarkdown":"The IRF6616TRPBF is an Infineon HEXFET N-channel MOSFET rated for 40 V drain-source breakdown and 19 A switching current, with a maximum on-resistance of 5 mOhm at Vgs = 10 V and Id = 19 A. That Rds(on) figure is the key efficiency spec for a 40 V FET — it sets the conduction loss floor in a synchronous buck, OR-ing diode replacement, or load switch. Gate charge is 44 nC max at 4.5 V, which keeps the driver current manageable at moderate switching frequencies. ## Junction temperature and thermal budget Power dissipation is rated at 2.8 W, so the board copper and airflow need to keep the junction below that 150°C limit under full load. ## Gate drive and switching considerations Vgs absolute maximum is ±20 V, which gives margin for gate-drive overshoot in a 12 V or 10 V gate-drive system. The 44 nC gate charge at 4.5 V means a 1 A gate driver can switch the FET in about 44 ns — fast enough for a 100–200 kHz converter without excessive cross-conduction. The threshold voltage is 2.25 V max at 250 µA, so the FET is fully enhanced with a 5 V logic-level gate drive, but a 10 V drive is recommended to hit the rated Rds(on).","metaTitle":"IRF6616TRPBF HEXFET N-Channel MOSFET, 40 V, 5 mOhm","metaDescription":"IRF6616TRPBF N-channel MOSFET, 40 V, 19 A, 5 mOhm Rds(on) at 10 V. Active production, RoHS compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"2.8","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0038","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"2.25 V @ 250µA","switching_current_a":"19.0","Rds On (Max) @ Id, Vgs":"5mOhm @ 19 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"44 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.15","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4cb8edfd2ce824801f520d48dcb3fc6f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the typical on-resistance (Rds(on)) of IRF6616TRPBF at 10 V gate drive?","answer":"The maximum Rds(on) is 5 mOhm at Vgs = 10 V and Id = 19 A. Typical values are lower, but the 5 mOhm max is the figure to use for worst-case conduction loss calculations."},{"question":"Is IRF6616TRPBF RoHS compliant and lead-free?","answer":"The part is listed as RoHS compliant and lead-free per the product description. The 'TRPBF' suffix indicates lead-free plating."},{"question":"Can IRF6616TRPBF be used as a replacement for IRF6616?","answer":"The IRF6616TRPBF is the lead-free variant of the base IRF6616. Electrical specifications (40 V, 5 mOhm, 19 A) are identical. The 'TRPBF' suffix denotes tape-and-reel packaging with lead-free plating. It is a direct functional replacement for the non-PBF version."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF6616TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF6616TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}